Advanced Imagers & Silicon Technology
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Advanced Imaging Technology Program
The Advanced Imaging Technology (AIT) program area at Lincoln Laboratory addresses a broad range of complex imaging problems by using a wide variety of silicon-based imager technologies, including charge-coupled devices (CCDs), active-pixel sensors (APSs), photodiode arrays, and Geiger-mode avalanche-photodiode (GMAPD) arrays that are single-photon sensitive. Many of these devices, including some very large imaging devices that require low defect levels, are fabricated by us from silicon wafers in our class-10 Microelectronics Laboratory. We also operate a fully equipped packaging facility that is capable of developing and performing innovative device packaging of imaging (and other) devices.

Specialized cameras have been designed and built to operate these devices both in a laboratory and field environment. Some of our programs required imagers to be deployed in space. For these programs, the AIT program area draws on the extensive experience of Lincoln Laboratory's Engineering Division to assure full environmental qualification for space systems.
The AIT program area seeks to advance the capability of imaging devices in one or several of these measures of imaging performance:
- High Sensitivity
- We have developed low-read-noise output amplifier circuits and also high-quantum-efficiency and high fill-factor back-illuminated devices.
- We have also pioneered single-electron-sensitive, GMAPD area array devices that are integrated with CMOS readout circuits on the imaging focal plane.
- High Speed. A wide range of techniques have been developed to handle single and multiple image samples with millisecond to subnanosecond time resolution.
- Large size. Large-area, high-pixel-count scientific imaging devices that are able to be abutted on four sides have been built.
- Wide wavelength range. We have developed processes to allow high-quality back-illuminated silicon devices to be made thicker than normal back-illuminated imagers so that photons are absorbed both near the band-edge (near IR) and also at more energetic (and penetrating) X-ray wavelengths (above 5 keV). We have also developed good back-illuminated performance when the absorption length is very short, such as in the UV, EUV, and soft-X-ray bands, and surface effects can dominate.
We have worked with a variety of government, scientific, and university organizations, and would be interested in hearing your difficult problem. If you are interested in discussing or possibly pursuing any of these technologies for your own application, please contact us.
- Upper left: an X-ray picture of the Crab Nebula, taken by the NASA Chandra Observatory, courtesy of NASA.
- Lower left: an artist's rendering of the NASA Chandra Great Observatory, courtesy of NASA.
- Center: picture of silicon wafer with four charge-coupled devices of the type used in Chandra.
- Upper right: three-dimensional image taken by Lincoln Laboratory LADAR using GMAPD sensors.
- Lower right: photograph of GMAPD sensor array developed and fabricated at Lincoln Laboratory.
Disclaimer: MIT Lincoln Laboratory is a federally funded research and development center administered by the Director of Defense Research and Engineering. Opinions, interpretations, conclusions, and recommendations contained in the Advanced Imaging Technology web pages are those of the Lincoln Laboratory authors and do not necessarily represent the views of the United States Government.
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