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Development and application of spherically curved charge-coupled device imagers

April 1, 2015
  |
Journal Article
Author:
James A. Gregory
…
Published in:
Appl. Opt., Vol. 54, No. 10, 1 April 2015, pp. 3072-82.
Topic:
optics
R&D area:
R&D group:

Summary

Operation of a CCD imager on a curved focal surface offers advantages to flat focal planes, especially for lightweight, relatively simple optical systems. The first advantage is that the modulation transfer function can approach diffraction-limited performance for a spherical focal surface employed in large field-of-view or large-format imagers. The second advantage is that a curved focal surface maintains more uniform illumination as a function of radius from the field center. Examples of applications of curved imagers, described here, include a small compact imager and the large curved array used in the Space Surveillance Telescope. The operational characteristics and mechanical limits of an imager deformed to a 15 mm radius are also described.
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Summary

Operation of a CCD imager on a curved focal surface offers advantages to flat focal planes, especially for lightweight, relatively simple optical systems. The first advantage is that the modulation transfer function can approach diffraction-limited performance for a spherical focal surface employed in large field-of-view or large-format imagers. The second...

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Development and application of spherically curved charge-coupled device imagers

30 to 50 ns liquid-crystal optical switches

January 1, 2010
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Journal Article
Author:
Michael W. Geis
…
Published in:
Optics Express, Vol. 18, No. 18, 30 August 2010, pp. 1886-18893.
Topic:
optics
R&D area:
R&D group:

Summary

The optical switching time of twisted-nematic liquid-crystal cells using the liquid crystals, 5CB (C,H,,-Ph-Ph-CN), 50CB(C,Hw O-Ph-Ph-CN) and PCH5 (C,H,,-Cy-Ph-CN) have been characterized as a function of temperature, prebias voltage and switching voltage, V. The transition time from 90 % to 10 % transmission scales as V-1.9 and is limited to 30 to 50 ns by the liquid-crystal breakdown electric field, - 100 V I'm-I The time fi-om the initial switching voltage step to 90 % transmission, delay time, decreases with increasing prebias and switching voltage. For 5CB and 50CS the delay time approaches a constant value at higher electric fields, >10 V ~1Il,-1. Both the transition and delay times decrease with increasing temperature. The minimum transition time at temperatures a few degrees below the nematicisotropic temperature are 32, 32, and 44 ns and delay times are 44, 25 and 8 ns for 5CB, 50CB, and PCH5 respectively.
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Summary

The optical switching time of twisted-nematic liquid-crystal cells using the liquid crystals, 5CB (C,H,,-Ph-Ph-CN), 50CB(C,Hw O-Ph-Ph-CN) and PCH5 (C,H,,-Cy-Ph-CN) have been characterized as a function of temperature, prebias voltage and switching voltage, V. The transition time from 90 % to 10 % transmission scales as V-1.9 and is limited to...

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30 to 50 ns liquid-crystal optical switches

Lincoln Laboratory high-speed solid-state imager technology

September 17, 2006
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Conference Paper
Author:
Robert K. Reich
…
Published in:
SPIE Vol. 6279, 27th Int. Congress on High-Speed Photography and Photonics, 17-22 September 2006, 62791K.
Topic:
optics
R&D area:
R&D group:

Summary

Massachusetts Institute of Technology, Lincoln Laboratory (MIT LL) has been developing both continuous and burst solid-state focal-plane-array technology for a variety of high-speed imaging applications. For continuous imaging, a 128 ¿ 128-pixel charge coupled device (CCD) has been fabricated with multiple output ports for operating rates greater than 10,000 frames per second with readout noise of less than 10 e- rms. An electronic shutter has been integrated into the pixels of the back-illuminated (BI) CCD imagers that give snapshot exposure times of less than 10 ns. For burst imaging, a 5 cm x 5 cm, 512 x 512-element, multi-frame CCD imager that collects four sequential image frames at megahertz rates has been developed for the Los Alamos National Laboratory Dual Axis Radiographic Hydrodynamic Test (DARHT) facility. To operate at fast frame rates with high sensitivity, the imager uses the same electronic shutter technology as the continuously framing 128 x 128 CCD imager. The design concept and test results are described for the burst-frame-rate imager. Also discussed is an evolving solid-state imager technology that has interesting characteristics for creating large-format x-ray detectors with ultra-short exposure times (100 to 300 ps). The detector will consist of CMOS readouts for high speed sampling (tens of picoseconds transistor switching times) that are bump bonded to deep-depletion silicon photodiodes. A 64 x 64-pixel CMOS test chip has been designed, fabricated and characterized to investigate the feasibility of making large-format detectors with short, simultaneous exposure times.
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Summary

Massachusetts Institute of Technology, Lincoln Laboratory (MIT LL) has been developing both continuous and burst solid-state focal-plane-array technology for a variety of high-speed imaging applications. For continuous imaging, a 128 ¿ 128-pixel charge coupled device (CCD) has been fabricated with multiple output ports for operating rates greater than 10,000 frames...

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Lincoln Laboratory high-speed solid-state imager technology

Dynamic response of an electronically shuttered CCD imager

June 1, 2004
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Journal Article
Author:
Dennis D. Rathman
…
Published in:
IEEE. Trans. Electron Devices, Vol. 51, No. 6, June 2004, pp. 864-869.
Topic:
sensors
R&D area:
R&D group:

Summary

The dynamic response of an electronically shuttered charge-coupled device (CCD) imager to nanosecond voltage pulses has been investigated. Measurements show that the shutter can be dynamically opened and closed in nanosecond times. For the shutter opening, simulations indicate that the collection of photoelectrons occurs in times much shorter than that needed to form the steady-state depletion region under the CCD well. In addition, the shutter closing occurs faster than the reconstitution of the p-buried (shutter) layer. Simulations further indicate that electric fields created in the neutral substrate by the shutter clocks enable photogenerated charge collection/rejection on nanosecond time scales despite the fact that the depletion-region formation and collapse take much longer times.
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Summary

The dynamic response of an electronically shuttered charge-coupled device (CCD) imager to nanosecond voltage pulses has been investigated. Measurements show that the shutter can be dynamically opened and closed in nanosecond times. For the shutter opening, simulations indicate that the collection of photoelectrons occurs in times much shorter than that...

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Dynamic response of an electronically shuttered CCD imager

High-speed, electronically shuttered solid-state imager technology

July 8, 2002
  |
Conference Paper
Author:
Robert K. Reich
…
Published in:
Rev. Sci. Instrum. Vol. 74, No. 3, Pt. II, March 2003, pp. 2027-2031 (Proceedings of the 14th Topical Conference on High-Temperature Plasma Diagnostics, 8-11 July 2002)
Topic:
electronics
R&D area:
R&D group:

Summary

Electronically shuttered solid-state imagers are being developed for high-speed imaging applications. A 5 cmx5 cm, 512x512-element, multiframe charge-coupled device (CCD) imager has been fabricated for the Los Alamos National Laboratory DARHT facility that collects four sequential image frames at megahertz rates. To operate at fast frame rates with high sensitivity, the imager uses an electronic shutter technology designed for back-illuminated CCDs. The design concept and test results are described for the burst-frame-rate imager. Also discussed is an evolving solid-state imager technology that has interesting characteristics for creating large-format x-ray detectors with short integration times (100 ps to 1 ns). Proposed device architectures use CMOS technology for high speed sampling (tens of picoseconds transistor switching times). Techniques for parallel clock distribution, that triggers the sampling of x-ray photoelectrons, will be described that exploit features of CMOS technology.
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Summary

Electronically shuttered solid-state imagers are being developed for high-speed imaging applications. A 5 cmx5 cm, 512x512-element, multiframe charge-coupled device (CCD) imager has been fabricated for the Los Alamos National Laboratory DARHT facility that collects four sequential image frames at megahertz rates. To operate at fast frame rates with high sensitivity...

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High-speed, electronically shuttered solid-state imager technology
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