Publications

Liquid immersion interference lithography at 157 nm has been used to print gratings of 27 nm half pitch with a fluorine-doped fused silica prism having index of 1.66. In order to achieve these dimensions, new immersion fluids have been designed and synthesized. These are partially fluorinated organosiloxanes with indexes up...

Pellicle materials for use at 157 nm must display sufficient transparency at this wavelength and adequate lifetimes to be useful. We blended a leading candidate fluoropolymer with silica nanoparticles to examine the effect on both the transparency and lifetime of the pellicle. It is anticipated that these composite materials may...

An electric induction micromotor with a 4-mm-diameter rotor was designed and built for high-power operation. Operated at partial actuating voltage, the motor has demonstrated an air gap power in excess of 20 mWand torque of 3 5 Nmat speeds in excess of 55 000 rpm. Operation at higher power and...

The outgassing of volatile organic compounds during photoresist exposure at short wavelengths (

We present the methodology and recent results on the longterm evaluation of optical materials for 157-nm lithographic applications. We review the unique metrology capabilities that have been developed for accurately assessing optical properties of samples both online and offline, utilizing VUV spectrophotometry with in situlamp-based cleaning. We describe ultraclean marathon...

The rise of low- k1 optical lithography in integrated circuit manufacturing has introduced new questions concerning the physical and practical limits of particular subwavelength resolution-enhanced imaging approaches. For a given application, trade-offs between mask complexity, design cycle time, process latitude and process throughput must be well understood. It has recently...

A frequency selective surface (FSS) structure has been fabricated for use in a thermophotovoltaic system. The FSS provides a means for reflecting the unusable light below the band gap of the thermophotovoltaic cell while transmitting the usable light above the band gap. This behavior is relatively independent of the light's...

We have developed a merged CCD/SOI-CMOS technology that enables the fabrication of monolithic, low-power imaging systems on a chip. The CCD's, fabricated in the bulk handle wafer, have charge-transfer inefficiencies of about 1x10(-5) and well capacities of more than 100,000 electrons with 3.3-V clocks and 8x8um pixels. Fully depleted 0.35pm...

It is shown that the time dependence of the carrier generation rate at a depleted surface can be exploited to completely suppress interface-state dark current in buried-channel charge-coupled devices (CCDs). When a surface is switched from an inverted to a depleted state, the generation current recovers with a time constant...