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High-quality 150 nm InP-to-silicon epitaxial transfer for silicon photonic integrated circuits
Summary
Summary
We demonstrate the transfer of the largest (150 mm in diameter) available InP-based epitaxial structure to the silicon-on-insulator substrate through a direct wafer-bonding process. Over 95% bonding yield and a void-free bonding interface was obtained. A multiple quantum-well diode laser structure is well-preserved after bonding, as indicated by the high-resolution...
Organometallic vapor phase epitaxy of relaxed InPAs/InP as multiplication layers for avalanche photodiodes
Summary
Summary
InP1-yAsy epitaxial layers grown lattice-mismatched (LMM) on InP substrates were investigated as a new materials system for multiplication layers in Geiger-mode avalanche photodiodes (GM APDs) for detection of photons in the range 1.6-2.5 mm. LMM InP1-yAsy epilayers were grown on semi-insulating (1 0 0) InP substrates misoriented 0.2 and 2...
Polymer matrix effects on acid generation
Summary
Summary
We have measured the acid generation efficiency with EUV exposure of a PAG in different polymer matrixes representing the main classes of resist polymers as well as some previously described fluoropolymers for lithographic applications. The polymer matrix was found to have a significant effect on the acid generation efficiency of...
Cryogenic YB3+-doped solid-state lasers
Summary
Summary
Cryogenically cooled solid-state lasers promise a revolution in power scalability while maintaining a good beam quality because of significant improvements in efficiency and thermo-optic properties. This is particularly true forYb3+ lasers because of their relatively lowquantum defect and relatively broadband absorption even at cryogenic temperatures. Thermo-optic properties of host materials...