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The orthogonal-transfer array: a new CCD architecture for astronomy

Published in:
SPIE Vol. 5499, Optical and Infrared Detectors for Astronomy, 21 June 2004, pp. 185-192.

Summary

The orthogonal-transfer array (OTA) is a new CCD architecture designed to provide wide-field tip-tilt correction of astronomical images. The device consists of an 8..8 array of small (~500x500 pixels) orthogonal-transfer CCDs (OTCCD) with independent addressing and readout of each OTCCD. This approach enables an optimum tip-tilt correction to be applied independently to each OTCCD across the focal plane. The first design of this device has been carried out at MIT Lincoln Laboratory in support of the Pan-STARRS program with a collaborative parallel effort at Semiconductor Technology Associates (STA) for the WIYN Observatory. The two versions of this device are functionally compatible and share a common pinout and package. The first wafer lots are complete at Lincoln and at Dalsa and are undergoing wafer probing.
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Summary

The orthogonal-transfer array (OTA) is a new CCD architecture designed to provide wide-field tip-tilt correction of astronomical images. The device consists of an 8..8 array of small (~500x500 pixels) orthogonal-transfer CCDs (OTCCD) with independent addressing and readout of each OTCCD. This approach enables an optimum tip-tilt correction to be applied...

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Photoresist outgassing: a potential Achilles heel for short wavelength optical lithography?

Published in:
SPIE Vol. 5376, Advances in Resist Technology and Processing XXI, 22-27 February 2004, pp. 1-15.

Summary

The outgassing of volatile organic compounds during photoresist exposure at short wavelengths (
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Summary

The outgassing of volatile organic compounds during photoresist exposure at short wavelengths (

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Marathon evaluation of optical materials for 157-nm lithography

Published in:
J. Microlithogr., Microfab., Microsyst., Vol. 2, No. 1, January 2003, pp. 19-26.

Summary

We present the methodology and recent results on the longterm evaluation of optical materials for 157-nm lithographic applications. We review the unique metrology capabilities that have been developed for accurately assessing optical properties of samples both online and offline, utilizing VUV spectrophotometry with in situlamp-based cleaning. We describe ultraclean marathon testing chambers that have been designed to decouple effects of intrinsic material degradation from extrinsic ambient effects. We review our experience with lithography-grade 157-nm lasers and detector durability. We review the current status of bulk materials for lenses, such as CaF(2) and BaF(2), and durability results of antireflectance coatings. Finally, we discuss the current state of laser durability of organic pellicles.
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Summary

We present the methodology and recent results on the longterm evaluation of optical materials for 157-nm lithographic applications. We review the unique metrology capabilities that have been developed for accurately assessing optical properties of samples both online and offline, utilizing VUV spectrophotometry with in situlamp-based cleaning. We describe ultraclean marathon...

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Broadband (200-1000 nm) back-illuminated ccd imagers

Summary

Improved and stable blue/UV quantum efficiency has been demonstrated on 2Kx4K imagers using molecular-beam epitaxy to create a thin doped layer on the back surface. Quantum efficiency data on thick (40-50 pm) imagers with single and dual-layer anti-reflection coatings is presented that demonstrates high and broadband response. Measurements of the optical point-spread response show the devices to be fully depleted with good response across a broad spectrum, but interesting features appear in the near-IR as a result of deeply penetrating light being scattered off the surface structure of the CCD.
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Summary

Improved and stable blue/UV quantum efficiency has been demonstrated on 2Kx4K imagers using molecular-beam epitaxy to create a thin doped layer on the back surface. Quantum efficiency data on thick (40-50 pm) imagers with single and dual-layer anti-reflection coatings is presented that demonstrates high and broadband response. Measurements of the...

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Optically sampled analog-to-digital converters

Published in:
IEEE Trans. Microw. Theory Tech., Vol. 49, No. 10, October 2001, pp. 1840-1853.
Topic:

Summary

Optically sampled analog-to-digital converters (ADCs) combine optical sampling with electronic quantization to enhance the performance of electronic ADCs. In this paper, we review the prior and current work in this field, and then describe our efforts to develop and extend the bandwidth of a linearized sampling technique referred to as phase-encoded optical sampling. The technique uses a dual-output electrooptic sampling transducer to achieve both high linearity and 60-dB suppression of laser amplitude noise. The bandwidth of the technique is extended by optically distributing the post-sampling pulses to an array of time-interleaved electronic quantizers. We report on the performance of a 505-MS/s (megasample per second) optically sampled ADC that includes high-extinction LiNbO(3) 1-to-8 optical time-division demultiplexers. Initial characterization of the 505-MS/s system reveals a maximum signal-to-noise ratio of 51 dB (8.2 bits) and a spur-free dynamic range of 61 dB. The performance of the present system is limited by electronic quantizer noise, photodiode saturation, and preliminary calibration procedures. None of these fundamentally limit this sampling approach, which should enable multigigahertz converters with 12-b resolution. A signal-to-noise analysis of the phase-encoded sampling technique shows good agreement with measured data from the 505-MS/s system.
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Summary

Optically sampled analog-to-digital converters (ADCs) combine optical sampling with electronic quantization to enhance the performance of electronic ADCs. In this paper, we review the prior and current work in this field, and then describe our efforts to develop and extend the bandwidth of a linearized sampling technique referred to as...

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Comparison of two flat reflector-type designs for dual-polarization, dual-band operation

Published in:
IEEE Antennas and Propagation Society Int. Synp. 2001 Digest, Vol. 2, 8-13 July 2001, pp. 288-291.

Summary

The parabolic reflector remains an essential antenna for high-gain applications. This is a result of its desirable characteristics based on geometric optics. These include relative frequency independence for sufficiently large apertures and high aperture efficiency. However, the parabolic reflector occupies a large volume. This may be aesthetically unappealing on the sides of buildings and structures. Also, from a mobile user perspective, a desirable characteristic is having a large aperture during operation while having a small volume when packed away and not in use. The parabolic reflector is typically constructed of multiple petals for mobile uses, but it does not pack into as small a volume as a flat, thin antenna would due to the curvature of the paraboloid. Therefore, the primary goal of the antennas studied in this work is developing flat reflector antennas to utilize the advantages of large reflector apertures while remaining capable of packing into a small volume. In addition, system requiremenls dictated dual-band, dual-polarized operation. Two flat reflectors are compared: a reflectarray and a zoned reflector. While each design is inherently narrow-band, methods of achieving dual-band operation were employed.
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Summary

The parabolic reflector remains an essential antenna for high-gain applications. This is a result of its desirable characteristics based on geometric optics. These include relative frequency independence for sufficiently large apertures and high aperture efficiency. However, the parabolic reflector occupies a large volume. This may be aesthetically unappealing on the...

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1.5-um Tapered-Gain-Region Lasers with High-CW Output Powers

Published in:
IEEE Photonics Technol. Lett., Vol. 10, No. 10, October 1998, pp. 1377-1379.

Summary

High-power diode lasers consisting of a ridge-waveguide section coupled to a tapered region have been fabricated in 1.5um InGaAsP-InP multiple-quantum-well material. Self-focusing at high current densities and high-intensity input into the taper section has been identified as a fundamental problem in these devices that has to be dealt with. To date, continuous-wave output powers>1 W with=80% of the power in the near-diffraction-limited central lobe of the far field have been obtained through a judicious choice of device parameters.
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Summary

High-power diode lasers consisting of a ridge-waveguide section coupled to a tapered region have been fabricated in 1.5um InGaAsP-InP multiple-quantum-well material. Self-focusing at high current densities and high-intensity input into the taper section has been identified as a fundamental problem in these devices that has to be dealt with. To...

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