Dennis D. Rathman

Dr. Dennis D. RathmanDr. Dennis D. Rathman joined the Advanced Imager Technology Group 15 years ago. His primary interest has been the development of high-speed imaging devices.

For 35 years, Dr. Rathman has been involved in a variety of process and device development programs for silicon (Si) devices and integrated circuit fabrication in the Microelectronics Group at Lincoln Laboratory. Among these are plasma process development for both etching and deposition, thin-film technology development for dielectrics and metallization, and the epitaxial overgrowth of Si on silicon dioxide (SiO2). In addition to his current work on high-speed imaging devices, he has been engaged in research and development of novel Si- and silicon carbide (SiC)-based devices and vacuum field emitter devices for high-frequency, high-power and biosensor applications.

In the past, Dr. Rathman has served a number of years on the program committee for the Device Research Conference.

Dr. Rathman received a BA degree in physics from Kutztown State College, Kutztown, Penn., and he received MS and PhD degrees in physics at Lehigh University. His thesis topic involved photocurrent spectroscopy of thermally grown SiO2 thin films.

 

 

 

 

 

 

 

 

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