Microelectronics Facilities

Silicon Device Fabrication

MIT Lincoln Laboratory fabricates silicon devices in the 70,000 square foot microelectronics fabrication facility pictured below. There are 8,100 ft2 of class-10 and 10,000 ft2 of class-100 clean-room areas.

Microelectronics LaboratoryMIT Lincoln Laboratory Microelectronics Laboratory

The equipment set is continuously updated and includes a production-class complementary metal-oxide semiconductor (CMOS) toolset with angled ion-implantation, cluster metallization and dry etch equipment, chemical-mechanical planarization equipment, rapid thermal processing, and advanced lithography capabilities
(i-Line, 248 nm, 193 nm). Currently, the wafer size is 200 mm.

In this facility, we have fabricated a number of different designs of multi-megapixel charge-coupled-device (CCD) imagers (visible, ultraviolet [UV], X-ray), most of which are thinned and back-illuminated.

Molecular-beam epitaxy system.Molecular-beam epitaxy system.

Using a molecular-beam-epitaxy system (shown at the left), we have developed highly stable and highly sensitive back-illuminated passivation layers for devices operating in the UV, extreme UV, and soft X-ray bands. These imagers have been used in Department of Defense and scientific programs and in ground-based astronomy observatories and satellite programs, such as the NASA Chandra Observatory and the Extreme Ultraviolet Variability Experiment (EVE).

We have developed several families of CMOS devices (0.25 μm mixed-signal fully depleted silicon-on-insulator [FDSOI] CMOS, 0.18 μm low-power FDSOI CMOS), and we are currently developing sub-100-nm FDSOI CMOS. Using experience gained with FDSOI wafers, we have developed a 3D circuit-stacking technology.

Staff working in the fabrication facility.Staff working in the fabrication facility.

We also fabricate Geiger-mode single-photon-counting detectors in this facility. We have developed techniques to bond these devices and make through-array contacts to commercial CMOS readout circuits. These devices have been integrated into several field-operable flash LADAR systems.

Other technologies developed here include niobium-based superconducting circuits, microelectromechanical RF switches and mirrors, and an integrated, 0.35 µm, 3.3 V CCD/SOI CMOS process.


Lincoln Laboratory also operates a fully equipped packaging facility capable of dicing wafers and developing and executing innovative packaging solutions on a variety of different device types.


We have conducted collaborative research in the past with government, industry, and university partners using these facilities. Please contact us to find out more.



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