Chang-Lee Chen

Dr. Chang-Lee Chen

Dr. Chang-Lee Chen is a technical staff member in the RF Technology Group. He is pursuing research in advanced device and circuit technologies for RF applications.

He pioneered the use of high-resistivity GaAs material as the gate insulator and buffer layer of MESFETs for high-power RF and high-speed logic circuits. He also explored the technology of combining monolithic microwave integrated circuits with other devices, such as resonant-tunneling diodes and magnetostatic-wave devices for new microwave applications.  He worked on the improvement of silicon RF CMOS and three-dimensional integration with compound semiconductor circuits for performance enhancement.  He is currently developing GaN circuits to be heterogenerously integrated with other circuits for high-performance single-chip RF modules.

Dr.  Chen has authored or coauthored numerous papers and conference presentations in the field of semiconductor devices and circuit technology. He served on the senior committee of the IEEE Silicon-on-Insulator (SOI)-3D-Subthreshold Microelectronics Technology Unified Conference.

Dr. Chen received a BS degree in electronics engineering from National Chia-Tung University in Taiwan and a PhD degree in electrical and computer engineering from the University of Michigan.

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