Richard J. Molnar

Dr. Richard J. Molnar

Dr. Richard J. Molnar is a technical staff member in the RF Technology Group, where he is pursuing research in the growth of III-N materials and development of associated devices.

Following graduate research at Boston University on the molecular beam epitaxy (MBE) growth of gallium nitride (GaN)-based light-emitting diodes, he came to Lincoln Laboratory to develop hydride vapor phase epitaxy (HVPE) of GaN and AlGaN. This work led to the development of low-dislocation free-standing GaN substrates and the first demonstration of Geiger-mode avalanche photodiodes in the III-N material system. More recently, he has been working to develop nitride materials for next-generation radar systems and short-wavelength injection lasers by organometallic vapor phase epitaxy (OMVPE) on silicon and bulk-GaN substrates.

Dr. Molnar has authored or coauthored more than 100 papers and conference presentations in the field of III-N materials and devices and holds four patents.

He received BS, MS, and PhD degrees in electrical engineering from Boston University.

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