Wide Bandgap Semiconductor Materials and Devices

The RF Technology Group leverages the Compound Semiconductor Laboratory and the silicon-based Microelectronics Laboratory within the Advanced Technology Division to develop material growth processes and new devices for RF and microwave photonics applications with a specific focus on the III-nitride semiconductor materials (aluminum [Al], indium [In], and gallium [Ga] nitrides [N]). Our hydride vapor phase epitaxy (HVPE) system provides >100 mm/hour growth rates of low-defect density GaN for thin-film and free-standing GaN substrate applications. For the development of GaN heterostructures, we use a metalorganic chemical vapor deposition (MOCVD) epitaxial growth system that is capable of material growth on 4-, 6-, and 8-inch wafers. After heterostructure growth is complete, semiconductor device structures can be quickly prototyped in the Compound Semiconductor Laboratory or introduced into the Microelectronics Laboratory to leverage a production-class 90-nm CMOS tool set on 8-inch wafers.

Fabrication facility for semiconductor materialsMetalorganic chemical vapor deposition (MOCVD) epitaxial growth system within the Compound Semiconductor Laboratory.









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