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MBE back-illuminated silicon Geiger-mode avalanche photodiodes for enhanced ultraviolet response

Published in:
SPIE Vol. 8033, Advanced Photon Counting Techniques V, 25 April 2011, 80330D.

Summary

We have demonstrated a wafer-scale back-illumination process for silicon Geiger-mode avalanche photodiode arrays using Molecular Beam Epitaxy (MBE) for backside passivation. Critical to this fabrication process is support of the thin (< 10 um) detector during the MBE growth by oxide-bonding to a full-thickness silicon wafer. This back-illumination process makes it possible to build low-dark-count-rate single-photon detectors with high quantum efficiency extending to deep ultraviolet wavelengths. This paper reviews our process for fabricating MBE back-illuminated silicon Geigermode avalanche photodiode arrays and presents characterization of initial test devices.
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Summary

We have demonstrated a wafer-scale back-illumination process for silicon Geiger-mode avalanche photodiode arrays using Molecular Beam Epitaxy (MBE) for backside passivation. Critical to this fabrication process is support of the thin ( 10 um) detector during the MBE growth by oxide-bonding to a full-thickness silicon wafer. This back-illumination process makes...

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Adaptive optics wavefront sensors based on photon-counting detector arrays

Published in:
Proc. SPIE Vol. 7736, Adaptive Optics Systems II, 27 June 2010, 773610.

Summary

For adaptive optics systems, there is a growing demand for wavefront sensors that operate at higher frame rates and with more pixels while maintaining low readout noise. Lincoln Laboratory has been investigating Geiger·mode avalanche photodiode arrays integrated with CMOS readout circuits as a potential solution. This type of sensor counts photons digitally within the pixel, enabling data to be read out at high rates without the penalty of readout noise. After a brief overview of adaptive optics sensor development at Lincoln Laboratory, we will present the status of silicon Geiger· mode·APD technology along with future plans to improve performance.
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Summary

For adaptive optics systems, there is a growing demand for wavefront sensors that operate at higher frame rates and with more pixels while maintaining low readout noise. Lincoln Laboratory has been investigating Geiger·mode avalanche photodiode arrays integrated with CMOS readout circuits as a potential solution. This type of sensor counts...

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Hybridization process for back-illuminated silicon Geiger-mode avalanche photodiode arrays

Published in:
SPIE Vol. 7681, Advanced Photon Counting Techniques IV, 5 April 2010, 76810P.

Summary

We present a unique hybridization process that permits high-performance back-illuminated silicon Geiger-mode avalanche photodiodes (GM-APDs) to be bonded to custom CMOS readout integrated circuits (ROICs) - a hybridization approach that enables independent optimization of the GM-APD arrays and the ROICs. The process includes oxide bonding of silicon GM-APD arrays to a transparent support substrate followed by indium bump bonding of this layer to a signal-processing ROIC. This hybrid detector approach can be used to fabricate imagers with high-fill-factor pixels and enhanced quantum efficiency in the near infrared as well as large-pixel-count, small-pixel-pitch arrays with pixel-level signal processing. In addition, the oxide bonding is compatible with high-temperature processing steps that can be used to lower dark current and improve optical response in the ultraviolet.
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Summary

We present a unique hybridization process that permits high-performance back-illuminated silicon Geiger-mode avalanche photodiodes (GM-APDs) to be bonded to custom CMOS readout integrated circuits (ROICs) - a hybridization approach that enables independent optimization of the GM-APD arrays and the ROICs. The process includes oxide bonding of silicon GM-APD arrays to...

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A multi-frame, megahertz CCD imager

Published in:
IEEE Trans. Nuclear Sci., Vol. 56, No. 3, June 2009, pp. 1188-1192.

Summary

The Los Alamos National Laboratory's Dual Axis Radiographic Hydrodynamic Test Facility (DARHT) generates flash radiographs of explosive experiments using two linear induction electron accelerators situated at right angles. The DARHT second axis accelerator generates an 18-MeV, 2 kA, 2 sec electron beam which is converted or "chopped" into four individual pulses ranging from 20 to 100 nsec in length at 2 MHz frequency. The individual electron beam pulses are down-converted by a segmented lutetium oxyorthosilicate scintillator, creating four visible light flashes, to image explosively driven events. To record these events, a high efficiency, high speed, imager has been fabricated which is capable of framing rates of 2 MHz. This device utilizes a 512 512 pixel charge coupled device (CCD) with a 25 cm2 active area, and incorporates an electronic shutter technology designed for back-illuminated CCD's, making this the largest and fastest back-illuminated CCD in the world. Characterizing an imager capable of this frame rate presents unique challenges. High speed LED drivers and intense radioactive sources are needed to perform basic measurements.We investigate properties normally associated with single-frame CCDs such as read noise, gain, full-well capacity, detective quantum efficiency (DQE), sensitivity, and linearity. In addition, we investigate several properties associated with the imager's multi-frame operation such as transient frame response and frame-to-frame isolation while contrasting our measurement techniques and results with more conventional devices.
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Summary

The Los Alamos National Laboratory's Dual Axis Radiographic Hydrodynamic Test Facility (DARHT) generates flash radiographs of explosive experiments using two linear induction electron accelerators situated at right angles. The DARHT second axis accelerator generates an 18-MeV, 2 kA, 2 sec electron beam which is converted or "chopped" into four individual...

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A 64 x 64-pixel CMOS test chip for the development of large-format ultra-high-speed snapshot imagers

Summary

A 64 x 64-pixel test circuit was designed and fabricated in 0.18- m CMOS technology for investigating high-speed imaging with large-format imagers. Several features are integrated into the circuit architecture to achieve fast exposure times with low-skew and jitter for simultaneous pixel snapshots. These features include an H-tree clock distribution with local and global repeaters, single-edge trigger propagation, local exposure control, and current-steering sampling circuits. To evaluate the circuit performance, test structures are periodically located throughout the 64 x 64-pixel device. Measured devices have exposure times that can be varied between 75 ps to 305 ps with skew times for all pixels less than +-3 ps and jitter that is less than +-1.2 ps rms. Other performance characteristics are a readout noise of approximately 115 e- rms and an upper dynamic range of 310,000 e-.
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Summary

A 64 x 64-pixel test circuit was designed and fabricated in 0.18- m CMOS technology for investigating high-speed imaging with large-format imagers. Several features are integrated into the circuit architecture to achieve fast exposure times with low-skew and jitter for simultaneous pixel snapshots. These features include an H-tree clock distribution...

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Multifocal multiphoton microscopy (MMM) at a frame rate beyond 600 Hz

Published in:
Opt. Express, Vol. 15, No. 17, 20 August 2007, pp. 10998-11005.

Summary

We introduce a multiphoton microscope for high-speed three-dimensional (3D) fluorescence imaging. The system combines parallel illumination by a multifocal multiphoton microscope (MMM) with parallel detection via a segmented high-sensitivity charge-couple device (CCD) camera. The instrument consists of a Ti-sapphire laser illuminating a microlens array that projects 36 foci onto the focal plane. The foci are scanned using a resonance scanner and imaged with a custom-made CCD camera. The MMM increases the imaging speed by parallelizing the illumination; the CCD camera can operate at a frame rate of 1428 Hz while maintaining a low read noise of 11 electrons per pixel by dividing its chip into 16 independent segments for parallelized readout. We image fluorescent specimens at a frame rate of 640 Hz. The calcium wave of fluo3 labeled cardiac myocytes is measured by imaging the spontaneous contraction of the cells in a 0.625 second sequence movie, consisting of 400 single images.
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Summary

We introduce a multiphoton microscope for high-speed three-dimensional (3D) fluorescence imaging. The system combines parallel illumination by a multifocal multiphoton microscope (MMM) with parallel detection via a segmented high-sensitivity charge-couple device (CCD) camera. The instrument consists of a Ti-sapphire laser illuminating a microlens array that projects 36 foci onto the...

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Lincoln Laboratory high-speed solid-state imager technology

Published in:
SPIE Vol. 6279, 27th Int. Congress on High-Speed Photography and Photonics, 17-22 September 2006, 62791K.

Summary

Massachusetts Institute of Technology, Lincoln Laboratory (MIT LL) has been developing both continuous and burst solid-state focal-plane-array technology for a variety of high-speed imaging applications. For continuous imaging, a 128 ¿ 128-pixel charge coupled device (CCD) has been fabricated with multiple output ports for operating rates greater than 10,000 frames per second with readout noise of less than 10 e- rms. An electronic shutter has been integrated into the pixels of the back-illuminated (BI) CCD imagers that give snapshot exposure times of less than 10 ns. For burst imaging, a 5 cm x 5 cm, 512 x 512-element, multi-frame CCD imager that collects four sequential image frames at megahertz rates has been developed for the Los Alamos National Laboratory Dual Axis Radiographic Hydrodynamic Test (DARHT) facility. To operate at fast frame rates with high sensitivity, the imager uses the same electronic shutter technology as the continuously framing 128 x 128 CCD imager. The design concept and test results are described for the burst-frame-rate imager. Also discussed is an evolving solid-state imager technology that has interesting characteristics for creating large-format x-ray detectors with ultra-short exposure times (100 to 300 ps). The detector will consist of CMOS readouts for high speed sampling (tens of picoseconds transistor switching times) that are bump bonded to deep-depletion silicon photodiodes. A 64 x 64-pixel CMOS test chip has been designed, fabricated and characterized to investigate the feasibility of making large-format detectors with short, simultaneous exposure times.
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Summary

Massachusetts Institute of Technology, Lincoln Laboratory (MIT LL) has been developing both continuous and burst solid-state focal-plane-array technology for a variety of high-speed imaging applications. For continuous imaging, a 128 ¿ 128-pixel charge coupled device (CCD) has been fabricated with multiple output ports for operating rates greater than 10,000 frames...

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LLiST - a new star tracker camera for tip-tilt correction at IOTA

Published in:
2004 SPIE Conf. on Astronomical Telescopes and Instrumentation, 21-26 June 2004.

Summary

The tip-tilt correction system at the Infrared Optical Telescope Array (IOTA) has been upgraded with a new star tracker camera. The camera features a backside-illuminated CCD chip offering doubled overall quantum efficiency and a four times higher system gain compared to the previous system. Tests carried out to characterize the new system showed a higher system gain with a lower read-out noise electron level. Shorter read-out cycle times now allow to compensate tip-tilt fluctuations so that their error imposed on visibility measurements becomes comparable to, and even smaller than, that of higher-order aberrations.
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Summary

The tip-tilt correction system at the Infrared Optical Telescope Array (IOTA) has been upgraded with a new star tracker camera. The camera features a backside-illuminated CCD chip offering doubled overall quantum efficiency and a four times higher system gain compared to the previous system. Tests carried out to characterize the...

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Dynamic response of an electronically shuttered CCD imager

Published in:
IEEE. Trans. Electron Devices, Vol. 51, No. 6, June 2004, pp. 864-869.

Summary

The dynamic response of an electronically shuttered charge-coupled device (CCD) imager to nanosecond voltage pulses has been investigated. Measurements show that the shutter can be dynamically opened and closed in nanosecond times. For the shutter opening, simulations indicate that the collection of photoelectrons occurs in times much shorter than that needed to form the steady-state depletion region under the CCD well. In addition, the shutter closing occurs faster than the reconstitution of the p-buried (shutter) layer. Simulations further indicate that electric fields created in the neutral substrate by the shutter clocks enable photogenerated charge collection/rejection on nanosecond time scales despite the fact that the depletion-region formation and collapse take much longer times.
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Summary

The dynamic response of an electronically shuttered charge-coupled device (CCD) imager to nanosecond voltage pulses has been investigated. Measurements show that the shutter can be dynamically opened and closed in nanosecond times. For the shutter opening, simulations indicate that the collection of photoelectrons occurs in times much shorter than that...

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High-fill-factor, burst-frame-rate charge-coupled device

Published in:
SPIE Vol. 5210, Ultrahigh- and High-Speed Photography, Photonics, and Videography, 3-8 August 2003, pp. 95-104.

Summary

A 512x512-element, multi-frame charge-coupled device (CCD) has been developed for collecting four sequential image frames at megahertz rates. To operate at fast frame rates with high sensitivity, the imager uses an electronic shutter technology developed for back-illuminated CCDs. Device-level simulations were done to estimate the CCD collection well spaces for sub-microsecond photoelectron collection times. Also required for the high frame rates were process enhancements that included metal strapping of the polysilicon gate electrodes and a second metal layer. Tests on finished back-illuminated CCD imagers have demonstrated sequential multi-frame capture capability with integration intervals in the hundreds of nanoseconds range.
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Summary

A 512x512-element, multi-frame charge-coupled device (CCD) has been developed for collecting four sequential image frames at megahertz rates. To operate at fast frame rates with high sensitivity, the imager uses an electronic shutter technology developed for back-illuminated CCDs. Device-level simulations were done to estimate the CCD collection well spaces for...

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