Publications
Afterpulsing in Geiger-mode avalanche photodiodes for 1.06um wavelength
March 27, 2006
Journal Article
Published in:
Appl. Phys. Lett., Vol. 88, No. 13, 27 March 2006, pp. 133503-1 - 133503-3.
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Summary
We consider the phenomenon of afterpulsing in avalanche photodiodes (APDs) operating in gated and free-running Geiger mode. An operational model of afterpulsing and other noise characteristics of APDs predicts the noise behavior observed in the free-running mode. We also use gated-mode data to investigate possible sources of afterpulsing in these devices. For 30-um-diam, 1.06-um-wavelength InGaAsP/InP APDs operated at 290 K and 4 V overbias, we obtained a dominant trap lifetime of td=0.32 us, a trap energy of 0.11 eV, and a baseline dark count rate 245 kHz.
Summary
We consider the phenomenon of afterpulsing in avalanche photodiodes (APDs) operating in gated and free-running Geiger mode. An operational model of afterpulsing and other noise characteristics of APDs predicts the noise behavior observed in the free-running mode. We also use gated-mode data to investigate possible sources of afterpulsing in these...
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1.5-um Tapered-Gain-Region Lasers with High-CW Output Powers
October 1, 1998
Journal Article
Published in:
IEEE Photonics Technol. Lett., Vol. 10, No. 10, October 1998, pp. 1377-1379.
Summary
High-power diode lasers consisting of a ridge-waveguide section coupled to a tapered region have been fabricated in 1.5um InGaAsP-InP multiple-quantum-well material. Self-focusing at high current densities and high-intensity input into the taper section has been identified as a fundamental problem in these devices that has to be dealt with. To date, continuous-wave output powers>1 W with=80% of the power in the near-diffraction-limited central lobe of the far field have been obtained through a judicious choice of device parameters.
Summary
High-power diode lasers consisting of a ridge-waveguide section coupled to a tapered region have been fabricated in 1.5um InGaAsP-InP multiple-quantum-well material. Self-focusing at high current densities and high-intensity input into the taper section has been identified as a fundamental problem in these devices that has to be dealt with. To...
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