Cryogenic Qubit Integration

Semiconductors, as the backbone of electronic devices, have a high demand for precision and versatility in the creation of interconnect structures. Interconnect structures form complex networks of electrical connections in a semiconductor device, contributing significantly to the device's functionality. Hence, there is a need for efficient, reproducible, and flexible methods of fabricating such structures. A challenge with existing semiconductor fabrication techniques is that some techniques lack precision in the deposition of resist and conductive material. This imprecision may result in either an over- or under-deposition of materials that compromises the functionality and exactness of the interconnect structures, consequently leading to poor performance and device failure.

Technology Description

This method of fabricating an interconnect structure within a semiconductor involves cycles of applying a defined amount of resist material over parts of the semiconductor structure and baking the structure to form parts of a resist layer. Each cycle results in a new resist layer portion. A conductive material is then deposited into an opening in the resist layer to form the desired conductive structure. The fabrication process is unique in its use of multiple spin cycles with different components to create an interconnect structure. Its differentiation lies in the precision of each application and the baking cycle that allows controlled creation of resistive and conductive layers. The process leads to highly customizable interconnect structures, making it a versatile method in semiconductor manufacturing.