Utilization of Halides to Improve Diamond Properties

Within quantum computing, quantum sensing, and quantum communication, there is an increasing demand for materials that can reliably support precisely defined defect centers for enhanced performance. Traditional diamond materials, while valuable for their inherent optical and electronic properties, often fall short in providing the stringent characteristics required for quantum applications. Limitations in material quality and defect control hinder consistent coherence and charge stability, thereby affecting the overall efficiency of next-generation quantum devices. Current methods for defect incorporation in diamond face significant challenges, including high activation-energy barriers and inefficient vacancy formation. These conventional processes yield low and inconsistent defect densities, complicating efforts to achieve uniform and stable quantum states. Additionally, precise control over the dopant activation and vacancy stabilization remains elusive, leading to suboptimal performance in practical applications. Such setbacks underscore the critical need for alternative approaches capable of delivering reliable, high-yield defect structures essential for scalable and robust quantum device engineering.

Technology Description

Described here are diamond materials that incorporate defect centers formed by substituting carbon atoms with nitrogen or silicon, paired with vacancies that may be neutral or negatively charged. Halide atoms are integrated into the diamond lattice to enhance defect formation. The process involves precision techniques such as chemical vapor deposition and plasma enhanced deposition, careful control of implantation energies and annealing conditions, and the use of dopant gases. These controlled conditions yield diamond layers with tailored NV and Si vacancy centers suitable for use in quantum computing, sensing, and advanced optical applications. What differentiates this approach is the strategic use of halide atoms—particularly chlorine—to significantly boost the formation of negatively charged defects. This multidonor doping strategy reduces the activation energy for NV center formation, resulting in an approximate eightfold increase compared to conventional nitrogen-only doping. Moreover, the refined methods of layer growth and post-treatment processing lead to improved charge stability, enhanced coherence times, and overall superior crystalline quality, setting this technology apart in the realm of diamond material engineering for quantum and optical applications.