The Microsystems Prototyping Foundry has broad material systems capabilities for technology development in the electric, photonic, and quantum domains.  

 

Epitaxial Materials >> Ex-situ Metrology

Compound Semiconductor Epitaxy

Aixtron CCS R&D Metal-Organic Chemical Vapor Deposition (MOCVD) Reactor

Aixtron CCS R&D Metal-Organic Chemical Vapor Deposition (MOCVD) Reactor

  • III-P/As/Sb epitaxy for optoelectronics heterostructures
  • Close-coupled showerhead geometry
  • Top-side pyrometric temperature control
  • In situ reflectance and wafer curvature measurement
  • Flexible wafer configurations from 7 x 2 in to 1 x 200 mm
Dual Veeco MOD GEN II Molecular Beam Epitaxy (MBE) Reactors

Dual Veeco MOD GEN II Molecular Beam Epitaxy (MBE) Reactors

  • III-/As/Sb/Bi epitaxy for optoelectronic heterostructures
  • Temperature monitoring via
    • Band-edge thermometry
    • Variable wavelength pyrometry
    • Black body emission
  • In situ reflection high-energy electron diffraction (RHEED)
  • Al, Ga, In, As, Sb, Bi, Si, Be, and GaTe effusion cell sources

Silicon and Germanium Epitaxy

ASM Epsilon MOCVD Epitaxy

ASM Epsilon MOCVD Epitaxy

  • 200-mm cassette to cassette 
  • Group 4 growth with P & N doping 
  • Si epitaxy for novel FET geometries 
  • Ge epitaxy on Si substrates 
  • SiGe epitaxy 
Veeco GEN200 Molecular Beam Epitaxy

Veeco GEN200 Molecular Beam Epitaxy

  • Growth: 
    • 2 e-beam sources
    •  5 effusion thermal sources
    •  8 elements and counting: Al, B, Mo, Nb, Re, Sb, Si, Ta 
  • Analysis:  
    • Beam flux  monitor 
    • Reflection high-energy electron diffraction (RHEED)
  • Electron impact  mission spectroscopy 
  • X-ray photoelectron spectroscopy 

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