Publications

Each year, on average a major magnitude-8 earthquake strikes somewhere in the world. In addition, 10,000 earthquake related deaths occur annually, where collapsing buildings claim by far most lives. Moreover, in recent events, industry activity of oil extraction and wastewater reinjection are suspected to cause earthquake swarms that threaten high-value...

The H-terminated surface of diamond when activated with NO2 produces a surface conduction layer that has been used to make FETs. Variations in processing can significantly affect this conduction layer. This article discusses the effect of diamond surface preparation and H termination procedures on surface conduction. Surface preparations that generate...

A novel low-profile nonlinear metasurface, consisting of a single-layer of all-dielectric material, is proposed and numerically investigated by a nonlinear full-wave finite-difference time-domain (FDTD) method. The proposed metasurface is transparent for low, and opaque for high values of incident light intensity. The metasurface design is broadly applicable to enhancement of...

Fully depleted silicon-on-insulator transistors were fabricated using two different metal gate deposition mechanisms to compare plasma damage effects on gate oxide quality. Devices fabricated with both plasma-enhanced atomic-layer-deposited (PE-ALD) TiN gates and magnetron plasma sputtered TiN gates showed very good electrostatics and short-channel characteristics. However, the gate oxide quality was...

Metal-dielectric nanolaminates represent a class of hyperbolic metamaterials with uniaxial permittivity tensor. In this study, we critically compare permittivity extraction of nanolaminate samples using two techniques: polarized reflectrometry vs. spectroscopic anisotropic ellipsometry. Both Au/MgF2 and Ag/MgF2 metal-dielectric stacks are examined. We demonstrate the applicability of the treatment of the multilayered...

We present measurements of trapped-ion motional-state heating rates in niobium and gold surface-electrode ion traps over a range of trap-electrode temperatures from approximately 4 K to room temperature (295 K) in a single apparatus. Using the sideband-ratio technique after resolved-sideband cooling of single ions to the motional ground state, we...

Superconducting qubits are electronic circuits comprising lithographically defined Josephson tunnel junctions, inductors, capacitors, and interconnects. When cooled to dillution refrigerator temperatures, these circuits behave as quantum mechanical "artificial atoms," exhibiting quantized states of electronic charge, magnetic flux, or junction phase depending on the design parameters of the constituent circuit elements...

Etching of indium tin oxide (ITO) thin films in high density chlorine plasmas is studied, with the goal of increasing the etching selectivity to photoresist. The ITO etching rate increases with ethylene addition, but is not affected by BCl3 addition. ITO exhibits a threshold energy for ion etching, whereas the...

We review recent progress in pulsed lasers using cryogenically-cooled Yb3+ -doped gain media, with an emphasis on high average power. Recent measurements of thermo-optic properties for various host material at both room and cryogenic temperature are presented, including themral conductivity, coefficient of thermal expansion and refractive index. Host materials reviewed...

Etching of TiN metal gate materials as a part of an integrated flow to fabricate fully depleted silicon-on-insulator ultralow-power transistors is reported. TiN etching is characterized as a function of source power, bias power, gas composition, and substrate temperature in a high density inductively coupled plasma reactor. Under the conditions...