Graphene-on-insulator transistors made using C on Ni chemical-vapor deposition
July 1, 2009
IEEE Electron Device Lett., Vol. 30, No. 7, July 2009, pp. 745-747.
Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO2 substrate. The properties and integration of these graphene-on-insulator transistors are presented and compared to the characteristics of devices made from graphitized SiC and exfoliated graphene flakes.