Optimized growth of lattice-matched In(x)Al(1-x)N/GaN heterostructures by molecular beam epitaxy
January 8, 2007
Appl. Phys. Lett., Vol. 90, No. 2, 8 January 2007, pp. 021922-1 - 021922-3.
The authors present a systematic study on the growth of the ternary compound In(x)Al(1-x)N by molecular beam epitaxy. This work concentrates on In mole fractions x around 0.17, as this composition is in-plane lattice matched to GaN. At a growth temperature of 540 degrees C, high quality material was obtained using a total metal to nitrogen flux ratio of ~1. Using these growth parameters, high quality GaN/InAlN superlattices were obtained without growth interruptions.