High-quality 150 nm InP-to-silicon epitaxial transfer for silicon photonic integrated circuits
January 14, 2009
Electrochem. Solid-State Lett., Vol. 12, No. 4, January 2009, pp. H101-H104.
We demonstrate the transfer of the largest (150 mm in diameter) available InP-based epitaxial structure to the silicon-on-insulator substrate through a direct wafer-bonding process. Over 95% bonding yield and a void-free bonding interface was obtained. A multiple quantum-well diode laser structure is well-preserved after bonding, as indicated by the high-resolution X-ray diffraction measurement and photoluminescence (PL) map. A bowing of 64.12 um is measured, resulting in a low bonding-induced strain of 17 MPa. PL measurement shows a standard deviation of 1.09% across the entire bonded area with less than 1.1 nm wavelength shift from the as-grown wafer.