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All-Active InGaAsP-InP Optical Tapered-Amplifier 1 X N Power Splitters

Published in:
IEEE Photonics Technol. Lett., Vol. 12, No. 8, August 2000, pp. 974-976.

Summary

All-active tapered-amplifier power splitters (TAPS) consisting of a single-mode input waveguide, which acts as a pre-amplifier, a two-dimensional (2-D) diffraction section, which amplifies the signal during the splitting process, and N single-mode output waveguides, which act as post-amplifiers, were fabricated in 1.3um InGaAsP quantum-well material. Gains in each output guide (power out of guide/input power) of greater than 10 dB with a uniformity of better than 0.5 dB from guide to guide were measured on a 1 x 8 TAPS device.
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Summary

All-active tapered-amplifier power splitters (TAPS) consisting of a single-mode input waveguide, which acts as a pre-amplifier, a two-dimensional (2-D) diffraction section, which amplifies the signal during the splitting process, and N single-mode output waveguides, which act as post-amplifiers, were fabricated in 1.3um InGaAsP quantum-well material. Gains in each output guide...

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1.5-um Tapered-Gain-Region Lasers with High-CW Output Powers

Published in:
IEEE Photonics Technol. Lett., Vol. 10, No. 10, October 1998, pp. 1377-1379.

Summary

High-power diode lasers consisting of a ridge-waveguide section coupled to a tapered region have been fabricated in 1.5um InGaAsP-InP multiple-quantum-well material. Self-focusing at high current densities and high-intensity input into the taper section has been identified as a fundamental problem in these devices that has to be dealt with. To date, continuous-wave output powers>1 W with=80% of the power in the near-diffraction-limited central lobe of the far field have been obtained through a judicious choice of device parameters.
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Summary

High-power diode lasers consisting of a ridge-waveguide section coupled to a tapered region have been fabricated in 1.5um InGaAsP-InP multiple-quantum-well material. Self-focusing at high current densities and high-intensity input into the taper section has been identified as a fundamental problem in these devices that has to be dealt with. To...

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