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Multifocal multiphoton microscopy (MMM) at a frame rate beyond 600 Hz

August 20, 2007
  |
Journal Article
Author:
Karsten Bahlmann
…
Published in:
Opt. Express, Vol. 15, No. 17, 20 August 2007, pp. 10998-11005.
Topic:
optics
R&D area:
R&D group:

Summary

We introduce a multiphoton microscope for high-speed three-dimensional (3D) fluorescence imaging. The system combines parallel illumination by a multifocal multiphoton microscope (MMM) with parallel detection via a segmented high-sensitivity charge-couple device (CCD) camera. The instrument consists of a Ti-sapphire laser illuminating a microlens array that projects 36 foci onto the focal plane. The foci are scanned using a resonance scanner and imaged with a custom-made CCD camera. The MMM increases the imaging speed by parallelizing the illumination; the CCD camera can operate at a frame rate of 1428 Hz while maintaining a low read noise of 11 electrons per pixel by dividing its chip into 16 independent segments for parallelized readout. We image fluorescent specimens at a frame rate of 640 Hz. The calcium wave of fluo3 labeled cardiac myocytes is measured by imaging the spontaneous contraction of the cells in a 0.625 second sequence movie, consisting of 400 single images.
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Summary

We introduce a multiphoton microscope for high-speed three-dimensional (3D) fluorescence imaging. The system combines parallel illumination by a multifocal multiphoton microscope (MMM) with parallel detection via a segmented high-sensitivity charge-couple device (CCD) camera. The instrument consists of a Ti-sapphire laser illuminating a microlens array that projects 36 foci onto the...

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Multifocal multiphoton microscopy (MMM) at a frame rate beyond 600 Hz

High-fill-factor, burst-frame-rate charge-coupled device

August 3, 2003
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Conference Paper
Author:
Robert K. Reich
…
Published in:
SPIE Vol. 5210, Ultrahigh- and High-Speed Photography, Photonics, and Videography, 3-8 August 2003, pp. 95-104.
Topic:
electronics
R&D area:
R&D group:

Summary

A 512x512-element, multi-frame charge-coupled device (CCD) has been developed for collecting four sequential image frames at megahertz rates. To operate at fast frame rates with high sensitivity, the imager uses an electronic shutter technology developed for back-illuminated CCDs. Device-level simulations were done to estimate the CCD collection well spaces for sub-microsecond photoelectron collection times. Also required for the high frame rates were process enhancements that included metal strapping of the polysilicon gate electrodes and a second metal layer. Tests on finished back-illuminated CCD imagers have demonstrated sequential multi-frame capture capability with integration intervals in the hundreds of nanoseconds range.
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Summary

A 512x512-element, multi-frame charge-coupled device (CCD) has been developed for collecting four sequential image frames at megahertz rates. To operate at fast frame rates with high sensitivity, the imager uses an electronic shutter technology developed for back-illuminated CCDs. Device-level simulations were done to estimate the CCD collection well spaces for...

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High-fill-factor, burst-frame-rate charge-coupled device

High-speed, electronically shuttered solid-state imager technology

July 8, 2002
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Conference Paper
Author:
Robert K. Reich
…
Published in:
Rev. Sci. Instrum. Vol. 74, No. 3, Pt. II, March 2003, pp. 2027-2031 (Proceedings of the 14th Topical Conference on High-Temperature Plasma Diagnostics, 8-11 July 2002)
Topic:
electronics
R&D area:
R&D group:

Summary

Electronically shuttered solid-state imagers are being developed for high-speed imaging applications. A 5 cmx5 cm, 512x512-element, multiframe charge-coupled device (CCD) imager has been fabricated for the Los Alamos National Laboratory DARHT facility that collects four sequential image frames at megahertz rates. To operate at fast frame rates with high sensitivity, the imager uses an electronic shutter technology designed for back-illuminated CCDs. The design concept and test results are described for the burst-frame-rate imager. Also discussed is an evolving solid-state imager technology that has interesting characteristics for creating large-format x-ray detectors with short integration times (100 ps to 1 ns). Proposed device architectures use CMOS technology for high speed sampling (tens of picoseconds transistor switching times). Techniques for parallel clock distribution, that triggers the sampling of x-ray photoelectrons, will be described that exploit features of CMOS technology.
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Summary

Electronically shuttered solid-state imagers are being developed for high-speed imaging applications. A 5 cmx5 cm, 512x512-element, multiframe charge-coupled device (CCD) imager has been fabricated for the Los Alamos National Laboratory DARHT facility that collects four sequential image frames at megahertz rates. To operate at fast frame rates with high sensitivity...

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High-speed, electronically shuttered solid-state imager technology

Broadband (200-1000 nm) back-illuminated ccd imagers

June 16, 2002
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Conference Paper
Author:
Barry E. Burke
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Published in:
Scientific Detectors Workshop 2002, 16-22 June 2002.p. 41-50.
Topic:
optics
R&D area:
R&D group:

Summary

Improved and stable blue/UV quantum efficiency has been demonstrated on 2Kx4K imagers using molecular-beam epitaxy to create a thin doped layer on the back surface. Quantum efficiency data on thick (40-50 pm) imagers with single and dual-layer anti-reflection coatings is presented that demonstrates high and broadband response. Measurements of the optical point-spread response show the devices to be fully depleted with good response across a broad spectrum, but interesting features appear in the near-IR as a result of deeply penetrating light being scattered off the surface structure of the CCD.
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Summary

Improved and stable blue/UV quantum efficiency has been demonstrated on 2Kx4K imagers using molecular-beam epitaxy to create a thin doped layer on the back surface. Quantum efficiency data on thick (40-50 pm) imagers with single and dual-layer anti-reflection coatings is presented that demonstrates high and broadband response. Measurements of the...

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Broadband (200-1000 nm) back-illuminated ccd imagers

Soft-x-ray CCD imagers for AXAF

October 1, 1997
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Journal Article
Author:
Barry E. Burke
…
Published in:
IEEE Trans. Electron Devices, Vol. 44, No. 10, October 1997, pp. 1633-1642.
Topic:
sensors
R&D area:
R&D group:

Summary

We describe the key features and performance data of a 1024 x 1026-pixel frame-transfer imager for use as a soft-x-ray detector on the NASA X-ray observatory Advanced X-ray Astrophysics Facility (AXAF). The four-port device features a floating-diffusion output circuit with a responsivity of 20/spl mu/V/e/sup -/ and noise of about 2 e/sup -/ at a 100-kHz data rate. Techniques for achieving the low sense-node capacitance of 5 fF are described. The CCD is fabricated on high-resistivity p-type silicon for deep depletion and includes narrow potential troughs for transfer inefficiencies of around 10/sup -7/ (ten to the negative 7). To achieve good sensitivity at energies below 1 keV, we have developed a back-illumination process that features low recombination losses at the back surface and has produced efficiencies of about 0.7 at 277 eV (carbon K/spl alpha/).
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Summary

We describe the key features and performance data of a 1024 x 1026-pixel frame-transfer imager for use as a soft-x-ray detector on the NASA X-ray observatory Advanced X-ray Astrophysics Facility (AXAF). The four-port device features a floating-diffusion output circuit with a responsivity of 20/spl mu/V/e/sup -/ and noise of about...

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Soft-x-ray CCD imagers for AXAF
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