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Automated exposure notification for COVID-19

Summary

Private Automated Contact Tracing (PACT) was a collaborative team and effort formed during the beginning of the Coronavirus Disease 2019 (COVID-19) pandemic. PACT's mission was to enhance contact tracing in pandemic response by designing exposure-detection functions in personal digital communication devices that have maximal public health utility while preserving privacy. This report explains and discusses the use of automated exposure notification during the COVID-19 pandemic and to provide some recommendations for those who may try to design and deploy similar technologies in future pandemics.
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Summary

Private Automated Contact Tracing (PACT) was a collaborative team and effort formed during the beginning of the Coronavirus Disease 2019 (COVID-19) pandemic. PACT's mission was to enhance contact tracing in pandemic response by designing exposure-detection functions in personal digital communication devices that have maximal public health utility while preserving privacy...

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Uniformity study of wafer-scale InP-to-silicon hybrid integration

Published in:
Appl. Phys. A, Mat. Sci. & Process., Vol. 103, No. 1, April 2011, pp. 213-218.

Summary

In this paper we study the uniformity of up to 150 mm in diameter wafer-scale III-V epitaxial transfer to the Si-on-insulator substrate through the O2 plasma-enhanced low-temperature (300°C) direct wafer bonding. Void-free bonding is demonstrated by the scanning acoustic microscopy with sub-um resolution. The photoluminescence (PL) map shows less than 1 nm change in average peak wavelength, and even improved peak intensity (4% better) and full width at half maximum (41% better) after 150 mm in diameter epitaxial transfer. Small and uniformly distributed residual strain in all sizes of bonding, which is measured by high-resolution X-ray diffraction Omega- 2Theta mapping, and employment of a two-period InP-InGaAsP superlattice at the bonding interface contributes to the improvement of PL response. Preservation of multiple quantum-well integrity is also verified by high-resolution transmission electron microscopy.
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Summary

In this paper we study the uniformity of up to 150 mm in diameter wafer-scale III-V epitaxial transfer to the Si-on-insulator substrate through the O2 plasma-enhanced low-temperature (300°C) direct wafer bonding. Void-free bonding is demonstrated by the scanning acoustic microscopy with sub-um resolution. The photoluminescence (PL) map shows less than...

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