Channel engineering of SOI MOSFETs for RF applications
October 5, 2009
2009 IEEE Int. SOI Conf. Proc., 5 October 2009.
Channel engineering of SOI MOSFETs is explored by altering ion implantation without adding any new fabrication steps to the standard CMOS process. The effects of implantation on characteristics important for RF applications, such as transconductance, output resistance, breakdown voltage, are compared. Data show that the best overall RF MOSFET has no body and drain-extension implants.