Publications
A novel method for remotely detecting trace explosives
Summary
Summary
The development of a technique with the ability to detect trace quantities of explosives at a distance is of critical importance. In numerous situations when explosive devices are prepared, transported, or otherwise handled, quantifiable amounts of the explosive material end up on surfaces. Rapid detection of these chemical residues in...
Detection of condensed-phase explosives via laser-induced vaporization, photodissociation, and resonant excitation
Summary
Summary
We investigate the remote detection of explosives via a technique that vaporizes and photodissociates the condensed-phase material and detects the resulting vibrationally excited NO fragments via laser-induced fluorescence. The technique utilizes a single 7 ns pulse of a tunable laser near 236:2nm to perform these multiple processes. The resulting blue-shifted...
CMOS-compatible dual-output silicon modulator for analog signal processing
Summary
Summary
A broadband, Mach-Zehnder-interferometer based silicon optical modulator is demonstrated, with an electrical bandwidth of 26 GHz and V[pi]L of 4 V·cm. The design of this modulator does not require epitaxial overgrowth and is therefore simpler to fabricate than previous devices with similar performance.
Effect of carrier lifetime on forward-biased silicon Mach-Zehnder modulators
Summary
Summary
We present a systematic study of Mach-Zehnder silicon optical modulators based on carrier-injection. Detailed comparisons between modeling and measurement results are made with good agreement obtained for both DC and AC characteristics. A figure of merit, static VpiL, as low as 0.24Vmm is achieved. The effect of carrier lifetime variation...
Experimental demonstration of remote optical detection of trace explosives.
Summary
Summary
MIT Lincoln Laboratory has developed a concept that could enable remote (10s of meters) detection of trace explosives' residues via a field-portable laser system. The technique relies upon laser-induced photodissociation of nitro-bearing explosives into vibrationally excited nitric oxide (NO) fragments. Subsequent optical probing of the first vibrationally excited state at...
Integration of high-speed surface-channel charge coupled devices into an SOI CMOS process using strong phase shift lithography
Summary
Summary
To enable development of novel signal processing circuits, a high-speed surface-channel charge coupled device (CCD) process has been co-integrated with the Lincoln Laboratory 180-nm RF fully depleted silicon-on-insulator (FDSOI) CMOS technology. The CCDs support charge transfer clock speeds in excess of 1 GHz while maintaining high charge transfer efficiency (CTE)...
Polymer matrix effects on acid generation
Summary
Summary
We have measured the acid generation efficiency with EUV exposure of a PAG in different polymer matrixes representing the main classes of resist polymers as well as some previously described fluoropolymers for lithographic applications. The polymer matrix was found to have a significant effect on the acid generation efficiency of...
All silicon infrared photodiodes: photo response and effects of processing temperature
Summary
Summary
CMOS compatible infrared waveguide Si photodiodes are made responsive from 1100 to 1750 nm by Si+ implantation and annealing. This article compares diodes fabricated using two annealing temperatures, 300 and 475C. 0.25-mm-long diodes annealed to 300C have a response to 1539 nm radiation of 0.1 A W-1 at a reverse...
Impact of photoacid generator leaching on optics photocontamination in 193-nm immersion lithography
Summary
Summary
Leaching of resist components into water has been reported in several studies. Even low dissolution levels of photoacid generator (PAG) may lead to photocontamination of the last optical surface of the projection lens. To determine the impact of this phenomenon on optics lifetime, we initiate a set of controlled studies...
Contribution of photoacid generator to material roughness
Summary
Summary
The authors have developed an atomic-force-microscopy-based technique to measure intrinsic material roughness after base development. This method involves performing an interrupted development of the resist film and measuring the resulting film roughness after a certain fixed film loss. Employing this technique, the authors previously established that the photoacid generator (PAG)...