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InP-based single-photon detector arrays with asynchronous readout integrated circuits

Summary

We have developed and demonstrated a highduty- cycle asynchronous InGaAsP-based photon counting detector system with near-ideal Poisson response, roomtemperature operation, and nanosecond timing resolution for near-infrared applications. The detector is based on an array of Geiger-mode avalanche photodiodes coupled to a custom integrated circuit that provides for lossless readout via an asynchronous, nongated architecture. We present results showing Poisson response for incident photon flux rates up to 10 million photons per second and multiple photons per 3-ns timing bin.
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Summary

We have developed and demonstrated a highduty- cycle asynchronous InGaAsP-based photon counting detector system with near-ideal Poisson response, roomtemperature operation, and nanosecond timing resolution for near-infrared applications. The detector is based on an array of Geiger-mode avalanche photodiodes coupled to a custom integrated circuit that provides for lossless readout via...

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Amplitude spectroscopy of a solid-state artificial atom

Published in:
Nature, Vol. 455, No. 7209, pp. 51-58.
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Summary

The energy-level structure of a quantum system, which has a fundamental role in its behaviour, can be observed as discrete lines and features in absorption and emission spectra. Conventionally, spectra are measured using frequency spectroscopy, whereby the frequency of a harmonic electromagnetic driving field is tuned into resonance with a particular separation between energy levels. Although this technique has been successfully employed in a variety of physical systems, including natural and artificial atoms and molecules, its application is not universally straightforward and becomes extremely challenging for frequencies in the range of tens to hundreds of gigahertz. Here we introduce a complementary approach, amplitude spectroscopy, whereby a harmonic driving field sweeps an artificial atom through the avoided crossings between energy levels at a fixed frequency. Spectroscopic information is obtained from the amplitude dependence of the system's response, thereby overcoming many of the limitations of a broadband-frequency-based approach. The resulting 'spectroscopy diamonds', the regions in parameter space where transitions between specific pairs of levels can occur, exhibit interference patterns and population inversion that serve to distinguish the atom's spectrum. Amplitude spectroscopy provides a means of manipulating and characterizing systems over an extremely broad bandwidth, using only a single driving frequency that may be orders of magnitude smaller than the energy scales being probed.
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Summary

The energy-level structure of a quantum system, which has a fundamental role in its behaviour, can be observed as discrete lines and features in absorption and emission spectra. Conventionally, spectra are measured using frequency spectroscopy, whereby the frequency of a harmonic electromagnetic driving field is tuned into resonance with a...

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Higher order cochlea-like channelizing filters

Published in:
IEEE Trans. Microw. Theory Tech., Vol. 56, No. 7, July 2008, pp. 1675-1683.
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Summary

A design method is presented for contiguous-channel multiplexing filters with many channels covering a wide bandwidth. The circuit topology extends previous work on cochlea-like channelizers by introducing multiple resonator-channel filter sections. The new design provides increased stopband rejection, lower insertion loss, and improved passband shape compared with the earlier version while retaining a simple design method and a compact layout, and requires no post-fabrication tuning. Results of a three-pole ten-channel channelizer covering from 182 MHz to 1.13 GHz with 17.5% bandwidth channels and 1.1-dB insertion loss are presented, and agree well with theory. A discussion of the power handling of planar channelizers is also presented.
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Summary

A design method is presented for contiguous-channel multiplexing filters with many channels covering a wide bandwidth. The circuit topology extends previous work on cochlea-like channelizers by introducing multiple resonator-channel filter sections. The new design provides increased stopband rejection, lower insertion loss, and improved passband shape compared with the earlier version...

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Integration of high-speed surface-channel charge coupled devices into an SOI CMOS process using strong phase shift lithography

Published in:
SPIE Vol. 6924, Optical Microlithography XXI, 26-27 February 2008, pp. 69244R.

Summary

To enable development of novel signal processing circuits, a high-speed surface-channel charge coupled device (CCD) process has been co-integrated with the Lincoln Laboratory 180-nm RF fully depleted silicon-on-insulator (FDSOI) CMOS technology. The CCDs support charge transfer clock speeds in excess of 1 GHz while maintaining high charge transfer efficiency (CTE). Both the CCD and CMOS gates are formed using a single-poly process, with CCD gates isolated by a narrow phase-shift-defined gap. CTE is strongly dependent on tight control of the gap critical dimension (CD). In this paper we review the tradeoffs encountered in the co-integration of the CCD and CMOS technologies. The effect of partial coherence on gap resolution and pattern fidelity is discussed. The impact of asymmetric bias due to phase error and phase shift mask (PSM) sidewall effects is presented, along with adopted mitigation strategies. Issues relating to CMOS pattern fidelity and CD control in the double patterning process are also discussed. Since some signal processing CCD structures involve two-dimensional transfer paths, many required geometries present phase compliance and trim engineering challenges. Approaches for implementing noncompliant geometries, such as T shapes, are described, and the impact of various techniques on electrical performance is discussed.
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Summary

To enable development of novel signal processing circuits, a high-speed surface-channel charge coupled device (CCD) process has been co-integrated with the Lincoln Laboratory 180-nm RF fully depleted silicon-on-insulator (FDSOI) CMOS technology. The CCDs support charge transfer clock speeds in excess of 1 GHz while maintaining high charge transfer efficiency (CTE)...

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X-band receiver front-end chip in silicon germanium technology

Published in:
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 23-25 January 2008.

Summary

This paper reports a demonstration of X-band receiver RF front-end components and the integrated chipset implemented in 0.18 mum silicon germanium (SiGe) technology. The system architecture consists of a single down conversion from X-band at the input to S-band at the intermediate frequency (IF) output. The microwave monolithic integrated circuit (MMIC) includes an X-band low noise amplifier, lead-lag splitter, balanced amplifiers, double balanced mixer, absorptive filter, and an IF amplifier. The integrated chip achieved greater than 30 dB of gain and less than 6 dB of noise figure.
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Summary

This paper reports a demonstration of X-band receiver RF front-end components and the integrated chipset implemented in 0.18 mum silicon germanium (SiGe) technology. The system architecture consists of a single down conversion from X-band at the input to S-band at the intermediate frequency (IF) output. The microwave monolithic integrated circuit...

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A low-loss double-tuned transformer

Published in:
IEEE Microw. Wirel. Compon. Lett., Vol. 17, No. 11, November 2007, pp. 772-774.
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Summary

In this letter, we present a state-of-the-art, planar double-tuned transformer using high- , micromachined spiral inductors and integrated capacitors. This circuit provides a 4:1 impedance transformation over a 30% bandwidth centered at 4.06 GHz, with a minimum insertion loss of 1.50 dB. The fabricated circuit occupies a total area of 440 500 m2 and finds application in power amplifier and other matching applications. An accurate lumped-element circuit model and design tradeoffs are presented. We believe this is the first implementation of a planar microwave double-tuned transformer.
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Summary

In this letter, we present a state-of-the-art, planar double-tuned transformer using high- , micromachined spiral inductors and integrated capacitors. This circuit provides a 4:1 impedance transformation over a 30% bandwidth centered at 4.06 GHz, with a minimum insertion loss of 1.50 dB. The fabricated circuit occupies a total area of...

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Arrays of InP-based avalanche photodiodes for photon counting

Summary

Arrays of InP-based avalanche photodiodes (APDs) with InGaAsP absorber regions have been fabricated and characterized in the Geiger mode for photon-counting applications. Measurements of APDs with InGaAsP absorbers optimized for 1.06 um wavelength show dark count rates (DCRs)
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Summary

Arrays of InP-based avalanche photodiodes (APDs) with InGaAsP absorber regions have been fabricated and characterized in the Geiger mode for photon-counting applications. Measurements of APDs with InGaAsP absorbers optimized for 1.06 um wavelength show dark count rates (DCRs)

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A 16mW 8Mbps fractional-n FSK modulator at 15.8-18.9GHz

Published in:
2007 IEEE Radio Frequency Integrated Circuits Symp., 3-5 June 2007, pp. 533-536.

Summary

Indirect modulation of fractional-N synthesizers is an energy-efficient architecture capable of moderate data rates, and is well-suited for use in sensor networks or WLAN. Although the architecture is used primarily at low RF frequencies, the capability for fractional- N synthesizers at Ku-band and above currently exist in available silicon technology. Recent demonstrations at 10- 25GHz show promising results, although power consumption at this higher frequency remains high for small batterypowered devices. This work implements a fully-integrated fractional-N synthesizer optimized for power efficient modulation at 15.8 to 18.9GHz with an 80MHz reference. Binary and 4-ary FSK modulation of up to 8Mbps is achieved while consuming 16mW in IBM 0.18um SiGe BiCMOS.
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Summary

Indirect modulation of fractional-N synthesizers is an energy-efficient architecture capable of moderate data rates, and is well-suited for use in sensor networks or WLAN. Although the architecture is used primarily at low RF frequencies, the capability for fractional- N synthesizers at Ku-band and above currently exist in available silicon technology...

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A sub-10mW 2Mbps BFSK transceiver at 1.35 to 1.75GHz.

Published in:
2007 IEEE Radio Frequency Integrated Circuits Symp., 3-5 June 2007, pp. 97-100.
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Summary

This work presents the design and measurement of a 2Mbps BFSK transceiver at 1.35 to 1.75GHz for use in wireless sensor node applications. The receiver is a direct conversion architecture and has a sensitivity of -74dBm at 2Mbps and consumes 8.0mW. The transmitter generates orthogonal BFSK modulation through the use of digital pre-emphasis of the synthesizer frequency control word and consumes 9.7mW including the power amplifier. The transmitter delivers >3dBm of output power for a total transmitter power efficiency of 23% and a transmitter FOM of 4.85nJ/bit at 2Mbps.
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Summary

This work presents the design and measurement of a 2Mbps BFSK transceiver at 1.35 to 1.75GHz for use in wireless sensor node applications. The receiver is a direct conversion architecture and has a sensitivity of -74dBm at 2Mbps and consumes 8.0mW. The transmitter generates orthogonal BFSK modulation through the use...

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Microwave-induced cooling of a superconducting qubit

Published in:
Sci., Vol. 314, No. 5805, 8 December 2006, pp. 1589-1592.
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Summary

We demonstrated microwave-induced cooling in a superconducting flux qubit. The thermal population in the first-excited state of the qubit is driven to a higher-excited state by way of a sideband transition. Subsequent relaxation into the ground state results in cooling. Effective temperatures as low as ≈3 millikelvin are achieved for bath temperatures of 30 to 400 millikelvin, a cooling factor between 10 and 100. This demonstration provides an analog to optical cooling of trapped ions and atoms and is generalizable to other solid-state quantum systems. Active cooling of qubits, applied to quantum information science, provides a means for qubit-state preparation with improved fidelity and for suppressing decoherence in multi-qubit systems.
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Summary

We demonstrated microwave-induced cooling in a superconducting flux qubit. The thermal population in the first-excited state of the qubit is driven to a higher-excited state by way of a sideband transition. Subsequent relaxation into the ground state results in cooling. Effective temperatures as low as ≈3 millikelvin are achieved for...

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