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Immersion patterning down to 27 nm half pitch

Published in:
J. Vac. Sci. Technol. B, Microelectron. Process. Phenon., Vol. 24, No. 6, November/December 2006, pp. 2789-2797 (EIPBN 2006, 30 May-2 June 2006).

Summary

Liquid immersion interference lithography at 157 nm has been used to print gratings of 27 nm half pitch with a fluorine-doped fused silica prism having index of 1.66. In order to achieve these dimensions, new immersion fluids have been designed and synthesized. These are partially fluorinated organosiloxanes with indexes up to 1.5. Their absorbance is on the order of 0.4/um (base 10), enabling the use of liquid films with micron-size thickness. To utilize these semiabsorptive fluids, an immersion interference printer has been designed, built, and implemented for handling micron-scale liquid layers.
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Summary

Liquid immersion interference lithography at 157 nm has been used to print gratings of 27 nm half pitch with a fluorine-doped fused silica prism having index of 1.66. In order to achieve these dimensions, new immersion fluids have been designed and synthesized. These are partially fluorinated organosiloxanes with indexes up...

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A wafer-scale 3-D circuit integration technology

Published in:
IEEE Trans. Electron Devices, Vol. 53, No. 10, October 2006, pp. 2507-2516.

Summary

The rationale and development of a wafer-scale three-dimensional (3-D) integrated circuit technology are described. The essential elements of the 3-D technology are integrated circuit fabrication on silicon-on-insulator wafers, precision wafer-wafer alignment using an in-house-developed alignment system, low-temperature wafer-wafer bonding to transfer and stack active circuit layers, and interconnection of the circuit layers with dense-vertical connections with sub-[Omega] 3-D via resistances. The 3-D integration process is described as well as the properties of the four enabling technologies. The wafer-scale 3-D technology imposes constraints on the placement of the first lithographic level in a wafer-stepper process. Control of wafer distortion and wafer bow is required to achieve submicrometer vertical vias. Three-tier digital and analog 3-D circuits were designed and fabricated. The performance characteristics of a 3-D ring oscillator, a 1024 x 1024 visible imager with an 8-um pixel pitch, and a 64 x 64 Geiger-mode laser radar chip are described.
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Summary

The rationale and development of a wafer-scale three-dimensional (3-D) integrated circuit technology are described. The essential elements of the 3-D technology are integrated circuit fabrication on silicon-on-insulator wafers, precision wafer-wafer alignment using an in-house-developed alignment system, low-temperature wafer-wafer bonding to transfer and stack active circuit layers, and interconnection of the...

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Lincoln Laboratory high-speed solid-state imager technology

Published in:
SPIE Vol. 6279, 27th Int. Congress on High-Speed Photography and Photonics, 17-22 September 2006, 62791K.

Summary

Massachusetts Institute of Technology, Lincoln Laboratory (MIT LL) has been developing both continuous and burst solid-state focal-plane-array technology for a variety of high-speed imaging applications. For continuous imaging, a 128 ¿ 128-pixel charge coupled device (CCD) has been fabricated with multiple output ports for operating rates greater than 10,000 frames per second with readout noise of less than 10 e- rms. An electronic shutter has been integrated into the pixels of the back-illuminated (BI) CCD imagers that give snapshot exposure times of less than 10 ns. For burst imaging, a 5 cm x 5 cm, 512 x 512-element, multi-frame CCD imager that collects four sequential image frames at megahertz rates has been developed for the Los Alamos National Laboratory Dual Axis Radiographic Hydrodynamic Test (DARHT) facility. To operate at fast frame rates with high sensitivity, the imager uses the same electronic shutter technology as the continuously framing 128 x 128 CCD imager. The design concept and test results are described for the burst-frame-rate imager. Also discussed is an evolving solid-state imager technology that has interesting characteristics for creating large-format x-ray detectors with ultra-short exposure times (100 to 300 ps). The detector will consist of CMOS readouts for high speed sampling (tens of picoseconds transistor switching times) that are bump bonded to deep-depletion silicon photodiodes. A 64 x 64-pixel CMOS test chip has been designed, fabricated and characterized to investigate the feasibility of making large-format detectors with short, simultaneous exposure times.
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Summary

Massachusetts Institute of Technology, Lincoln Laboratory (MIT LL) has been developing both continuous and burst solid-state focal-plane-array technology for a variety of high-speed imaging applications. For continuous imaging, a 128 ¿ 128-pixel charge coupled device (CCD) has been fabricated with multiple output ports for operating rates greater than 10,000 frames...

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Coherent beam combining of large number of PM fibres in 2-D fibre array

Published in:
Electron. Lett., Vol. 42, No. 18, 31 August 2006, pp. 17-18.

Summary

Coherent combining of a record 48 PM fibres in a phased array configuration is reported. The resulting Strehl ratio degrades by
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Summary

Coherent combining of a record 48 PM fibres in a phased array configuration is reported. The resulting Strehl ratio degrades by

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An end-to-end demonstration of a receiver array based free-space photon counting communications link

Published in:
SPIE Vol. 6304, Free-Space Laser Communications VI, 13-17 August 2006, pp. 63040H-1 - 63040H-13.

Summary

NASA anticipates a significant demand for long-haul communications service from deep-space to Earth in the near future. To address this need, a substantial effort has been invested in developing a free-space laser communications system that can be operated at data rates that are 10-1000 times higher than current RF systems. We have built an endto- end free-space photon counting testbed to demonstrate many of the key technologies required for a deep space optical receiver. The testbed consists of two independent receivers, each using a Geiger-mode avalanche photodiode detector array. A hardware aggregator combines the photon arrivals from the two receivers and the aggregated photon stream is decoded in real time with a hardware turbo decoder. We have demonstrated signal acquisition, clock synchronization, and error free communications at data rates up to 14 million bits per second while operating within 1 dB of the channel capacity with an efficiency of greater than 1 bit per incident photon.
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Summary

NASA anticipates a significant demand for long-haul communications service from deep-space to Earth in the near future. To address this need, a substantial effort has been invested in developing a free-space laser communications system that can be operated at data rates that are 10-1000 times higher than current RF systems...

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Ultra-linear superwideband chirp generator using digital compensation

Published in:
IEEE MTT-S Int. Microwave Symp., 11-16 June 2006, pp. 403-406.

Summary

A novel digital compensation technique is applied to linearize the frequency generation of a superwideband chirp. Ultra-linear, low-noise swept local oscillators (SLO) are critical to the two-tone dynamic range performance of compressive receivers. The proposed technique enables full software control of the chirp linearity, slope, and offset to allow automated real-time calibration and testing, including automatic compensation for temperature variation. This approach combines recently available commercial high-speed digital, mixed-signal, and analog integrated circuits along with microwave components to create a 15.5-24 GHz chirp over 60 nsec with
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Summary

A novel digital compensation technique is applied to linearize the frequency generation of a superwideband chirp. Ultra-linear, low-noise swept local oscillators (SLO) are critical to the two-tone dynamic range performance of compressive receivers. The proposed technique enables full software control of the chirp linearity, slope, and offset to allow automated...

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Afterpulsing in Geiger-mode avalanche photodiodes for 1.06um wavelength

Summary

We consider the phenomenon of afterpulsing in avalanche photodiodes (APDs) operating in gated and free-running Geiger mode. An operational model of afterpulsing and other noise characteristics of APDs predicts the noise behavior observed in the free-running mode. We also use gated-mode data to investigate possible sources of afterpulsing in these devices. For 30-um-diam, 1.06-um-wavelength InGaAsP/InP APDs operated at 290 K and 4 V overbias, we obtained a dominant trap lifetime of td=0.32 us, a trap energy of 0.11 eV, and a baseline dark count rate 245 kHz.
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Summary

We consider the phenomenon of afterpulsing in avalanche photodiodes (APDs) operating in gated and free-running Geiger mode. An operational model of afterpulsing and other noise characteristics of APDs predicts the noise behavior observed in the free-running mode. We also use gated-mode data to investigate possible sources of afterpulsing in these...

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Laser radar imager based on 3D integration of Geiger-mode avalanche photodiodes with two SOI timing circuit layers

Summary

We have developed focal-plane arrays and laser-radar (ladar) imaging systems based on Geiger-mode avalanche photodiodes (APDs) integrated with high-speed all-digital CMOS timing circuits. A Geiger-mode APD produces a digital pulse upon detection of a single photon. This pulse is used to stop a fast digital counter in the pixel circuit, thereby measuring photon arrival time. This "photon-to-digital conversion" yields quantum-limited sensitivity and noiseless readout, enabling high-performance ladar systems. Previously reported focal planes, based on bump bonding or epoxy bonding the APDs to foundry chips, had coarse (100um) pixel spacing and 0.5ns timing quantization.
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Summary

We have developed focal-plane arrays and laser-radar (ladar) imaging systems based on Geiger-mode avalanche photodiodes (APDs) integrated with high-speed all-digital CMOS timing circuits. A Geiger-mode APD produces a digital pulse upon detection of a single photon. This pulse is used to stop a fast digital counter in the pixel circuit...

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250 mW, 1.5 um monolithic passively mode-locked slab-coupled optical waveguide laser

Published in:
Opt. Lett., Vol. 31, No. 2, January 15, 2006, pp. 223-225.

Summary

We report the demonstration of a 1.5 um InGaAsP mode-locked slab-coupled optical waveguide laser (SCOWL) producing 10 ps pulses with energies of 58 pJ and average output powers of 250 mW at a repetition rate of 4.29 GHz. To the best of our knowledge, this is the first passively mode-locked slab-coupled optical waveguide laser. The large mode and low confinement factor of the SCOWL architecture allows the realization of monolithic mode-locked lasers with high output power and pulse energy. The laser output is nearly diffraction limited with M2 values less than 1.2 in both directions.
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Summary

We report the demonstration of a 1.5 um InGaAsP mode-locked slab-coupled optical waveguide laser (SCOWL) producing 10 ps pulses with energies of 58 pJ and average output powers of 250 mW at a repetition rate of 4.29 GHz. To the best of our knowledge, this is the first passively mode-locked...

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Engineering of the electrocapillary behavior of electrolyte droplets on thin fluoropolymer films

Published in:
Langmuir, Vol. 22, No. 13, 20 June 2006, pp. 5690-5696.

Summary

This study presents methods for engineering the electrocapillary behavior of fluoropolymer surfaces through the use of surfactants and an external insulating liquid. By the scaling of the appropriate surface energies, electrocapillary behavior is obtained at a record low voltage, with contact angle changes in excess of 100[degrees] at 4 V. A consistent description of electrocapillary saturation is presented, identifying three separate regimes: breakdown, thermodynamic instability, and relaxation. Methods for identifying and mitigating some of the saturation behaviors are discussed. Finally, the parameters influencing the observed voltage of zero charge are summarized.
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Summary

This study presents methods for engineering the electrocapillary behavior of fluoropolymer surfaces through the use of surfactants and an external insulating liquid. By the scaling of the appropriate surface energies, electrocapillary behavior is obtained at a record low voltage, with contact angle changes in excess of 100[degrees] at 4 V...

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