Joseph S. Park

Dr. Joseph S. Park is a technical staff member in the Advanced Materials and Microsystems Group at Lincoln Laboratory. He has focused on developing next-generation III-nitride device applications essential for a national security.

Park has more than 20 years of R&D and manufacturing experience in the area of Si and III-V compound semiconductor devices. Prior to joining Lincoln Laboratory, he was a postdoctoral fellow at the National Institute of Standards and Technology, characterizing Si and wide-bandgap semiconductor materials and devices using scanning capacitance and Kelvin probe microscopies. He later worked as a senior principal engineer and senior member of the technical staff with many major industries, developing InGaN/GaN MQW LEDs, InGaAsP LDs, AlGaN/GaN HEMTs, GaN-on-GaN FinFETs, and CTE-matched substrates. He architected an 8-inch GaN-on-Si technology solution from IP evaluation to package steps of VR/AR micro-display applications as a technical lead at GlobalFoundries.

Park holds BS, MS, and PhD degrees in physics from Chungnam National University, located in South Korea.