Fabrication

• 90 nm resolution
• 20 nm overlay (8-nm upgrade in progress)
• 26 mmｘ32 mm (scan) field size
• Four-times reduction, 0.75NA lens
• Interfaced to TEL ACT12 track for full-flow lithography
• Focus spot monitor and EFESE upgrades

• 800 nm resolution (600 nm demonstrated)
• 150 nm overlay
• 50 mmｘ50 mm field size
• Two-times reduction, 0.27NA lens

• 250 nm resolution (200 nm demonstrated)
• 100 nm overlay
• 22 mmｘ22 mm field size
• Five-times reduction

• High-resolution lithography with 7 nm spot size
• 100 kV write mode
• 200 mm wafer through part piece compatibility
• Automated exposures from 10 holder loadlock
• GenISys BEAMER and Raith GUI combine for advanced pattern preparation

• 200 mm field emission top-down critical dimension (CD) SEM
• Dual load ports
• Dual load chamber
• Resolution < 80 nm
• Auto job CD measurements

• 8 nm resolution
• 200 mm system with three indexers

• DPS Poly (FE) – ICP etcher used for HBr/Cl2–based Si etches
• DPS Metal (BE) – ICP etcher used for Cl2/BCl3–based AlCu stack and other metal etches
• EMAX CT+ (FE and BE) – MERIE etcher used for fluorocarbon-based dielectric etches
• ASP+ (FE and BE) – Downstream microwave strip chamber for O2/H2O–based in situ resist strip

• High Si etch rate ~2–3 µm/min
• High aspect ratio up to 100:1
• High selectivity to resist mask (100:1) and oxide hardmasks (200:1)

• 200 mm cassette to cassette
• Dielectric fluorocarbon etches

• 200 mm cassette to cassette
• 2-chamber cluster
• Cl2/BCl3–based metal etches
• In-situ O2/NH3 resist strip

• O2 remote plasma
• 250C post-implant resist strip

• O2 plasma with no bias
• 120C post-develop descum
• Good for limited thermal budget

• Physical vapor deposition (PVD) sputtering
• Metal organic chemical vapor deposition
• IMP (Ionized Metal Plasma) sputtering
• Reactive PVD and IMP sputtering
• Orienter/Degas module
• Argon Sputter Preclean module
• Cool chamber

• Al-based cluster metallization system
• Degas module
• Argon sputter pre-clean module
• Physical vapor deposition
• Reactive physical vapor deposition

• Tungsten deposition for damascene plug fill
• Chemical vapor deposition mode
• Pulsed nucleation layer mode

• Six 200 mm wafer batch size
• Six-pocket electron-beam source
• Resistance thermal source
• Many established deposition materials
• Lift-off and other low-energy deposition processes

• Speed chamber has PECVD gap-fill deposition with simultaneous etch
• Sequel chamber has PECVD deposition of SiO2, Si3N4, SiOxNy

• Batch hot-wall reactor for high uniformity
• Demonstrated low-particulate films

• Implant range: 5e12 to > 1e17 ion/cm2
• Wafer twist and tilt control
• 200 eV to 80 kV ion energy
• Species include phosphine PH3 (SDS) P+, P++, P+++; arsine AsH3 (SDS) As+, As++; boron trifluoride (SDS) BF3, BF2, B+, B++, F+; germanium tetrafluoride GeF4 (SDS) Ge4

• Mechanically limited throughput (200 mm): 425 WPH (single step)/320 WPH (quad mode)​
• Dose range: 1.0E11–1.0E16 atoms/cm.​
• Energy range of 2 keV to 1 MeV, single charge maximum of 335keV ​
• Programmable tilt, twist, and control​
• Species include P+, P++, P+++,  As+, As++, B+, B++, Bf2, GeF4

• Honeycomb lamp source 
• Seven-point temperature measurement 
• 100 Hz closed-loop control 
• 240 rpm wafer rotation  
• High uniformity spike anneal or implant and other anneals 

• Contour polish heads
• Five-zone “EZ UPA” head pressure control
• Timed oxide polish for intermetal dielectrics and ultra-shallow trench isolation
• End-pointed tungsten plug polish for damascene via interconnect

• Both-side polypropylene brush scrub
• Chemistry dispense
• Meg transducer in spin station
• Spin station and infrared lamp for wafer dry

• Brightfield and darkfield imaging detection
• 35-times magnification
• ≤ 150 nm defect detection capability
• 20 wafers per hour at highest sensitivity setting
• On-board optical defect imaging
• Defect image throughput of 1.2 seconds per defect
• KLARF maps for electron microscope defect location

• Tip/tilt sample manipulation
• Profile and sidewall analysis
• Defect metrology
• Elemental analysis via Oxford Instruments EDS

• Thin film thickness, refractive index (n) and absorption coefficient (k)
• Dual beam spectroscopy – normal incidence
• Spectroscopic ellipsometry
• Film stacks up to 8 layers with 7 unknowns (t, n, or k)
• 250 nm to 800 nm λ lamp

• Cassette to cassette
• Pattern recognition
• 10 nm to 131,000 nm step heights
• Static step height repeatability
• Static (no unload) 0.75 nm (1δ) on 1 µm step
• Dynamic step height repeatability (load and unload) 2 nm (1δ)

• Cross-beam system with coincident electron and gallium ion beams  
• 65 nA maximum focused ion beam current  
• Sub-nm scanning electron microscope resolution at 1 kV  
• Dual-wavelength femtosecond laser ablation system with < 300 fs pulse duration  
• Multi-gas injection system for both metal/insulator deposition and accelerated etching  

• Low trimmed edge roughness for reduced defect shedding 
• Integrated spin rinse station​ 
• Automated wafer on tape handling 
• Automated wafer alignment​ 

• Exposure area up to 200 × 200 mm²
• Minimum feature size to 300 nm
• Maximum write speed of 2000 mm²/min (4 µm feature size)
• Address grid down to 5 nm
• Grayscale exposure mode with up to 1000 gray levels
• Front and backside alignment
• Climate chamber

• Direct-write laser system
• Automated stage
• Advanced laser focus
• .8 µ capability
• Backside alignment

• Edge bead removal, back-side rinse
• Bulk and cartridge-based automated dispensing systems
• Gyrset option for rectangles and viscous coatings

• HMDS priming
• N2 flushing program controlled, no oxidation
• Heating ramp-up with 20 program-steps

• 200 mm resist laminator
• Wide variety of thicknesses

• Automated recipe control
• Spin, exhaust control options
• Bake plate, programmable lift pins

• Electron beam evaporator
• Six 15 cc pockets
• Advanced sweep
• Large batch, up to four 200 mm wafers
• Rotation

• Dielectric
• Four 25 cc pockets
• PopTop source
• Ion beam
• Load locked
• Variable angle planetary

  ↵

• High aspect ratio fill
• Load locked

• 200 mm wafers or smaller
• Fountain plate design
• Copper 500 µm deposition
• 200 µm conformal fill

• Pulsed flow exothermic silicon and germanium etching
• Manual load workpieces of 200 mm wafers and smaller discrete items

• Oxides and nitrides
• Six-gas plasma-enhanced chemical vapor deposition, including tetraethyl orthosilicate
• 50–300 C electrode temperature control

• Oxides and nitrides
• Six-gas plasma-enhanced chemical vapor deposition
• Temperature-controlled upper/lower electrodes

• Four sources: three DC sources (metal) and one RF source (insulators)
• Pre-clean RF
• Load lock

• Four simultaneous sputter sources
• E-beam evaporator
• Indexing sputter mask for same-run experimentation

• Three-chamber inductively coupled plasma cluster etch system
• 2 in to 200 mm capable
• Advanced endpoint
• Backside helium cooled
• Load locked cassette-to-cassette loading

• 150 mm capable
• Load locked
• Electrostatic chuck
• Backside helium cooled
• 250 C electrode temperature

• Highly selective anisotropic etcher
• Silicon, silicon dioxide, polysilicon, silicon nitride, gallium arsenide
• 1 kW RF generator
• Water-cooled platen

• Ion milling process
• 50–1200 eV
• Profile +/-2%
• Cooled substrate
• Load locked/silicon dioxide
• Precision tilt angle

• Pulsed flow exothermic silicon and germanium etching
• Manual load workpieces of 200-mm wafers and smaller discrete items

• Six wavelengths, 405–950 nm spectral range
• Wafers to 300 mm
• Automated user-defined mapping measurements

• Manual load mapping profilometers include Dektak XT, Tencor P-17, and Tencor P-15

• 50–200 mm wafers
• Precision wafer bow from laser reflectance
• Stress range of 1–4000 MPa
• Accuracy of < 2.5%
• Room temperature to 500 C operation

• Measures 50–200 mm wafers
• Defect sensitivity of 0.23 µm
• Defect map and histogram with zoom
• Haze map and histogram with zoom

• Automated critical dimensions and overlay measurement
• Width accuracy to 500 nm
• Overlay accuracy within 50 nm
• 200 mm mapping stage
• Automated imaging documentation

• 3-electrode arc discharge splicer, can operate in partial vacuum for lower heat levels, improved power uniformity
• Can splice optical fiber from 80 to 2500 μm cladding diameter
• Tapering operations with process monitor
• Thermal core expansion
• In-situ fiber cleaver
• Polarization-maintaining fiber rotational alignment capability (manual, end view only)

• Uses absorption of CO2 laser light (~10 μm wavelength) to splice fibers up to 2.3 mm cladding diameter
• Light-tight (class 1 laser product)
• Tapering and thermal core expansion operations
• Polarization-maintaining fiber rotational alignment capability (end view or side view)

• Uses absorption of CO2 laser light (~10 μm wavelength) to thermally ablate glass cladding material without substantially weakening fiber
• Light-tight (class 1 laser product)
• Fiber rotation allows for machining of cladding anywhere on azimuth
• Capable of machining along fiber length up to 12 cm

• Oxyhydrogen flame-based splicing and glass processing system with flexible torch design
• Can splice optical fiber from 80 μm to greater than 2.5 mm diameter
• Tapering and thermal core expansion operations
• Polarization-maintaining fiber rotational alignment capability (end view only)
• In-situ fiber cleaver and fiber recoater

• Filament fusion splicing and glass processing system
• Can splice optical fiber with cladding diameters up to 1.7 mm
• Tapering and thermal core expansion operations
• Polarization-maintaining fiber rotational alignment capability (end view only)

• Ultrasonic actuation of solvent bath removes residual acrylate coating left after fiber stripping
• Cleans fiber lengths of up to 200 mm

• Ultrasonic actuation of solvent bath removes residual acrylate coating left after fiber stripping
• Compatible with Fitel and Fujikura fusion splicer fiber holders

• Cleaves fiber with cladding diameters up to 550 μm
• Can be operated by using battery power
• Can store four separate cleave programs when disconnected from a computer
• Flat cleaves only

• Cleaves fiber with cladding diameters up to 1000 μm
• Capable of < 0.1 degree cleave angles via relief of torsional clamping stress
• Flat cleaves only

• Cleaves fiber with cladding diameters between 80 and 1000 μm
• Flat or angled cleaves

• Cleaves fiber with cladding diameters between 80 and 200 μm
• Battery operated
• Compatible with Fitel and Fujikura fusion splicer fiber holders

• Up to 220 N of force
• 160–1000 μm fiber diameter (including coating)

• 320 μm and 600 μm diameter recoat diameters
• Acrylate and fluoroacrylate coating materials
• Recoat lengths 50 or 100 mm (depending on model)

• Arc-discharge fusion splicer (2-electrode)
• 125–450 μm cladding diameters
• Can operate on battery power

• Arc-discharge fusion splicer (3-electrode)
• Polarization maintaining fiber rotational alignment capability (side view only)
• 80–600 μm cladding diameters

• Arc-discharge fusion splicer (2- and 3-electrode models in house)
• Polarization-maintaining fiber rotational alignment capability (side view only)
• 80–800 μm cladding diameters (depending on model)
• Can operate on battery power

• Arc-discharge fusion splicer (2-electrode)
• Polarization-maintaining fiber rotational alignment capability (end view and side view)
• 80–1000 μm cladding diameters

• Filament fusion splicer
• Polarization maintaining fiber rotational alignment capability (end view only)
• Strips, cleans, cleaves, splices, and recoats fiber, all in one unit
• 80–200 μm cladding diameters

• Hot-air thermal fiber stripper for fibers with coating diameters up to 600 μm
• Fiber strip lengths 2–150 mm
• Window-stripping only (does not strip the ends of fibers)

• Motorized razor-blade stripper
• For fibers with cladding diameters between 60–1200 μm
• Fiber strip lengths 1–35 mm

• 1D and 2D refractive index profiling of 40–400 μm diameter optical fibers at wavelengths between 500 and 1000 nm
• 500 nm transverse spatial resolution, 10 μm axial resolution

• Measures reflectivity vs. fiber length at 1310 or 1064 nm center wavelength via swept-wavelength interferometry
• 10 μm spatial resolution out to 30 m fiber length

• 10 needles/inch
• 8 yarn carriers
• 1 elastic yarn feeder
• 16 in knitting width designed for hats, gloves, and small swatches
• Yarn unwinding accessory for spooling fiber of flanged spools

• Maximum fabric width: 20.5 in
• Maximum fabric length: 25 m per warp
• Servo-feeder for flange spooled fiber
• Rigid rapier loom
  • Cut selvedge fringe on each side of fabric
  • Yarns not continuous

• Tower height: 6 m
• Draw speed up to 15 m/min
• Three zone furnace
  • 50 mm inner diameter
  • Individually controlled zones each with maximum temperature of 425 C

• Processing temperatures from room temperature to 315 C
• Force application of up to 3000 kg
• Vacuum chamber capability; purge with air or nitrogen
• Chiller capability for rapid cooling
• Four heaters per platen (top/bottom)

• Depositing core layers on glass tube of 20–42 mm outer diameter
• Up to 4 bubblers, including SiCl4, GeCl4, POCl3
• Up to 5 additional gases, including C2F6
• Substrate working length of 3000 mm
• Rare earth doping through solution doping

• Tower height: 7 m
• Preform diameter: 10–40 mm
• Draw speed up to 100 m/min
• Double inline coating applicators with ultraviolet cure

• Index profiling for preform up to 2 m long
• Preform diameter: 10–40 mm
• Automated multiple z position and multiple angle profiling