Oleksiy Slobodyan

Dr. Oleksiy V. Slobodyan is a technical staff member in RF Technology Group. His current research focuses on designing gallium nitride (GaN)-on-silicon monolithic microwave integrated circuits (MMICs) and developing advanced 3D-integration techniques. He aims to apply this research to electro-optical devices and return to working with photodetectors in the future.

Before joining the Laboratory in 2022, Oleksiy worked at Sandia National Laboratories designing avalanche photodetectors. He soon branched out into advanced CMOS — working on high-k oxide gates and GaN performance, and publishing reliability studies of GaN power diodes and 3D integration of photodetectors. He then moved to Boston and worked for Raytheon, integrating production of GaN MMICs and infrared detectors.

Slobodyan received his early education in the uncompromising system of post-Soviet Ukraine, before moving to Minnesota in his adolescence. After high school, he earned a BS degree in electrical and computer engineering from University of Wisconsin–Madison. With graduation looming, he decided to continue his graduate education. In 2016, he graduated from the University of Texas at Austin with a PhD degree in electrical engineering. Slobodyan's dissertation, "Investigation of Charge Transport Mechanisms in Organic Bulk Heterojunctions," was a notable development in the field of organic photovoltaic materials at the time.