Yan Zhang

Dr. Yan Zhang is a member of the technical staff in the Advanced Materials and Microsystems Group at Lincoln Laboratory, where she specializes in process and device modeling for silicon and III–V compound semiconductors using advanced technology computer-aided design (TCAD) simulations.

Zhang brings over a decade of industry and academic experience to her role. Prior to joining Lincoln Laboratory, she served as a postdoctoral fellow at Harvard University, followed by positions at IBM and MACOM, where she focused on compact modeling, TCAD modeling, and characterization of a range of silicon technologies and III-V (GaAs, GaN-on-silicon, and GaN-on-SiC) technologies. At Applied Materials, she contributed to the development of next-generation logic and memory technologies including FinFET, gate-all-around (GAA), CFET, and 3D-DRAM, collaborating with leading foundries such as TSMC, Samsung, Intel, SK Hynix, and Micron.

Zhang earned her PhD degree in electrical engineering from the University of Massachusetts Amherst and holds MS and BS degrees in electrical engineering from institutions in China. Her research has resulted in over 15 peer-reviewed publications and 20 issued patents. She is a recipient of IBM’s Invention Award and the David Navon Scholarship for excellence in solid-state electronics research.

In addition to her technical work, Zhang served on the Modeling and Simulation Subcommittee for the IEEE International Electron Devices Meeting (IEDM) in 2025.