The authors present a systematic study on the growth of the ternary compound In(x)Al(1-x)N by molecular beam epitaxy. This work concentrates on In mole fractions x around 0.17, as this composition is in-plane lattice matched to GaN. At a growth temperature of 540 degrees C, high quality material was obtained using a total metal to nitrogen flux ratio of ~1. Using these growth parameters, high quality GaN/InAlN superlattices were obtained without growth interruptions.