Etching of indium tin oxide (ITO) thin films in high density chlorine plasmas is studied, with the goal of increasing the etching selectivity to photoresist. The ITO etching rate increases with ethylene addition, but is not affected by BCl3 addition. ITO exhibits a threshold energy for ion etching, whereas the photoresist etches spontaneously in chlorine plasmas. The ITO:photoresist selectivity increases with BCl3 addition, ion bombardment energy, and C2H4 addition. It is proposed that the ITO etching rate is limited by desorption of InClx products, and that ethylene addition assists in scavenging oxygen from ITO leaving loosely bound In, which is more easily removed by physical sputtering.