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Uniformity study of wafer-scale InP-to-silicon hybrid integration

Published in:
Appl. Phys. A, Mat. Sci. & Process., Vol. 103, No. 1, April 2011, pp. 213-218.

Summary

In this paper we study the uniformity of up to 150 mm in diameter wafer-scale III-V epitaxial transfer to the Si-on-insulator substrate through the O2 plasma-enhanced low-temperature (300°C) direct wafer bonding. Void-free bonding is demonstrated by the scanning acoustic microscopy with sub-um resolution. The photoluminescence (PL) map shows less than 1 nm change in average peak wavelength, and even improved peak intensity (4% better) and full width at half maximum (41% better) after 150 mm in diameter epitaxial transfer. Small and uniformly distributed residual strain in all sizes of bonding, which is measured by high-resolution X-ray diffraction Omega- 2Theta mapping, and employment of a two-period InP-InGaAsP superlattice at the bonding interface contributes to the improvement of PL response. Preservation of multiple quantum-well integrity is also verified by high-resolution transmission electron microscopy.
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Summary

In this paper we study the uniformity of up to 150 mm in diameter wafer-scale III-V epitaxial transfer to the Si-on-insulator substrate through the O2 plasma-enhanced low-temperature (300°C) direct wafer bonding. Void-free bonding is demonstrated by the scanning acoustic microscopy with sub-um resolution. The photoluminescence (PL) map shows less than...

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High-quality 150 nm InP-to-silicon epitaxial transfer for silicon photonic integrated circuits

Published in:
Electrochem. Solid-State Lett., Vol. 12, No. 4, January 2009, pp. H101-H104.

Summary

We demonstrate the transfer of the largest (150 mm in diameter) available InP-based epitaxial structure to the silicon-on-insulator substrate through a direct wafer-bonding process. Over 95% bonding yield and a void-free bonding interface was obtained. A multiple quantum-well diode laser structure is well-preserved after bonding, as indicated by the high-resolution X-ray diffraction measurement and photoluminescence (PL) map. A bowing of 64.12 um is measured, resulting in a low bonding-induced strain of 17 MPa. PL measurement shows a standard deviation of 1.09% across the entire bonded area with less than 1.1 nm wavelength shift from the as-grown wafer.
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Summary

We demonstrate the transfer of the largest (150 mm in diameter) available InP-based epitaxial structure to the silicon-on-insulator substrate through a direct wafer-bonding process. Over 95% bonding yield and a void-free bonding interface was obtained. A multiple quantum-well diode laser structure is well-preserved after bonding, as indicated by the high-resolution...

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