A double patterning process is presented to pattern sub-35 nm wide channels in hydrogen silsesquioxane with near 100% pattern densities. Using aligned electron beam lithography, each side of the nanochannel structure is patterned as a separate layer. A 50000 uC/cm^2 high-dose anneal is applied to the first layer after exposure. Channels with widths below ~60 nm are shown to exhibit footing with standard tetramethyl ammonium hydroxide developers. This problem is resolved by adding surfectant during the development of the final channel structure. The resulting process produced channels