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Design, simulation, and fabrication of three-dimensional microsystem components using grayscale photolithography

Summary

Grayscale lithography is a widely known but underutilized microfabrication technique for creating three-dimensional (3-D) microstructures in photoresist. One of the hurdles for its widespread use is that developing the grayscale photolithography masks can be time-consuming and costly since it often requires an iterative process, especially for complex geometries. We discuss the use of PROLITH, a lithography simulation tool, to predict 3-D photoresist profiles from grayscale mask designs. Several examples of optical microsystems and microelectromechanical systems where PROLITH was used to validate the mask design prior to implementation in the microfabrication process are presented. In all examples, PROLITH was able to accurately and quantitatively predict resist profiles, which reduced both design time and the number of trial photomasks, effectively reducing the cost of component fabrication.
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Summary

Grayscale lithography is a widely known but underutilized microfabrication technique for creating three-dimensional (3-D) microstructures in photoresist. One of the hurdles for its widespread use is that developing the grayscale photolithography masks can be time-consuming and costly since it often requires an iterative process, especially for complex geometries. We discuss...

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High-resolution, high-throughput, CMOS-compatible electron beam patterning

Published in:
SPIE Advanced Lithography, 26 February - 2 March 2017.

Summary

Two scanning electron beam lithography (SEBL) patterning processes have been developed, one positive and one negative tone. The processes feature nanometer-scale resolution, chemical amplification for faster throughput, long film life under vacuum, and sufficient etch resistance to enable patterning of a variety of materials with a metal-free (CMOS/MEMS compatible) tool set. These resist processes were developed to address two limitations of conventional SEBL resist processes: (1) low areal throughput and (2) limited compatibility with the traditional microfabrication infrastructure.
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Summary

Two scanning electron beam lithography (SEBL) patterning processes have been developed, one positive and one negative tone. The processes feature nanometer-scale resolution, chemical amplification for faster throughput, long film life under vacuum, and sufficient etch resistance to enable patterning of a variety of materials with a metal-free (CMOS/MEMS compatible) tool...

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Electrically switchable diffractive waveplates with metasurface aligned liquid crystals

Published in:
Opt. Express, Vol. 24, No. 21, 17 October 2016, 24265-24273.

Summary

Diffractive waveplates and equivalent metasurfaces provide a promising path for applications in thin film beam steering, tunable lenses, and polarization filters. However, fixed metasurfaces alone are unable to be tuned electronically. By combining metasurfaces with tunable liquid crystals, we experimentally demonstrate a single layer device capable of electrically switching a diffractive waveplate design at a measured peak diffraction efficiency of 35%, and a minimum switching voltage of 10V. Furthermore, the nano-scale metasurface aligned liquid crystals are largely independent of variations in wavelength and temperature. We also present a computational analysis of the efficiency limits of liquid crystal based diffractive waveplates, and compare this analysis to experimental measurements.
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Summary

Diffractive waveplates and equivalent metasurfaces provide a promising path for applications in thin film beam steering, tunable lenses, and polarization filters. However, fixed metasurfaces alone are unable to be tuned electronically. By combining metasurfaces with tunable liquid crystals, we experimentally demonstrate a single layer device capable of electrically switching a...

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Nanochannel fabrication based on double patterning with hydrogen silsesquioxane

Published in:
J. Vac. Sci. Technol. B, Microelectron. Process. Phenon., Vol. 33, No. 2, March 2015, 020601.

Summary

A double patterning process is presented to pattern sub-35 nm wide channels in hydrogen silsesquioxane with near 100% pattern densities. Using aligned electron beam lithography, each side of the nanochannel structure is patterned as a separate layer. A 50000 uC/cm^2 high-dose anneal is applied to the first layer after exposure. Channels with widths below ~60 nm are shown to exhibit footing with standard tetramethyl ammonium hydroxide developers. This problem is resolved by adding surfectant during the development of the final channel structure. The resulting process produced channels
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Summary

A double patterning process is presented to pattern sub-35 nm wide channels in hydrogen silsesquioxane with near 100% pattern densities. Using aligned electron beam lithography, each side of the nanochannel structure is patterned as a separate layer. A 50000 uC/cm^2 high-dose anneal is applied to the first layer after exposure...

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Engineered liquid crystal anchoring energies with nanopatterned surfaces

Published in:
Opt. Express, Vol. 23, No. 2, 26 January 2015, pp. 807-14.

Summary

The anchoring energy of liquid crystals was shown to be tunable by surface nanopatterning of periodic lines and spaces. Both the pitch and height were varied using hydrogen silsesquioxane negative tone electron beam resist, providing for flexibility in magnitude and spatial distribution of the anchoring energy. Using twisted nematic liquid crystal cells, it was shown that this energy is tunable over an order of magnitude. These results agree with a literature model which predicts the anchoring energy of sinusoidal grooves.
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Summary

The anchoring energy of liquid crystals was shown to be tunable by surface nanopatterning of periodic lines and spaces. Both the pitch and height were varied using hydrogen silsesquioxane negative tone electron beam resist, providing for flexibility in magnitude and spatial distribution of the anchoring energy. Using twisted nematic liquid...

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A roadmap for optical lithography

Published in:
Optics & Photonics News, Vol. 21, No. 6, June 2010, pp. 26-31.

Summary

The International Technology Roadmap for Semiconductors is the go-to standard for predicting future technology requirements and driving global research and development in the semiconductor industry. This article serves as your roadmap to what it all means for optical lithography over the next 10 to 15 years.
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Summary

The International Technology Roadmap for Semiconductors is the go-to standard for predicting future technology requirements and driving global research and development in the semiconductor industry. This article serves as your roadmap to what it all means for optical lithography over the next 10 to 15 years.

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Lithographically directed surface modification

Published in:
J. Vacuum Sci. Technol. B, Microelectron. Process. Phenon., Vol. 27, No. 6, p. 3031-3037.

Summary

The directed assembly of polystyrene-block-poly(methyl methacrylate) films on a variety of photolytically nanopatterned siloxane-modified surfaces was investigated. The amount of siloxane removal is related to the exposure dose of a 157 nm laser. The modified surfaces were imaged using a 157 nm interference exposure system to lithographically define areas of different surface energies to direct the assembly of the diblock copolymer films. The analysis of the surface energy aerial image provided insights into the exposure doses required to result in defect-free films. While the slope of the surface energy aerial image was not found to be important by itself, in concert with the difference in high and low surface energy regions, as well as the maximum value of the low surface energy region, it provided insight into conditions needed to direct self-assembly of the block copolymer films. Preliminary investigations concerning the extension of this methodology to 193 nm showed that the polar surface energy of arylsiloxane-modified surfaces can also be affected by 193 nm exposure.
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Summary

The directed assembly of polystyrene-block-poly(methyl methacrylate) films on a variety of photolytically nanopatterned siloxane-modified surfaces was investigated. The amount of siloxane removal is related to the exposure dose of a 157 nm laser. The modified surfaces were imaged using a 157 nm interference exposure system to lithographically define areas of...

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Integration of high-speed surface-channel charge coupled devices into an SOI CMOS process using strong phase shift lithography

Published in:
SPIE Vol. 6924, Optical Microlithography XXI, 26-27 February 2008, pp. 69244R.

Summary

To enable development of novel signal processing circuits, a high-speed surface-channel charge coupled device (CCD) process has been co-integrated with the Lincoln Laboratory 180-nm RF fully depleted silicon-on-insulator (FDSOI) CMOS technology. The CCDs support charge transfer clock speeds in excess of 1 GHz while maintaining high charge transfer efficiency (CTE). Both the CCD and CMOS gates are formed using a single-poly process, with CCD gates isolated by a narrow phase-shift-defined gap. CTE is strongly dependent on tight control of the gap critical dimension (CD). In this paper we review the tradeoffs encountered in the co-integration of the CCD and CMOS technologies. The effect of partial coherence on gap resolution and pattern fidelity is discussed. The impact of asymmetric bias due to phase error and phase shift mask (PSM) sidewall effects is presented, along with adopted mitigation strategies. Issues relating to CMOS pattern fidelity and CD control in the double patterning process are also discussed. Since some signal processing CCD structures involve two-dimensional transfer paths, many required geometries present phase compliance and trim engineering challenges. Approaches for implementing noncompliant geometries, such as T shapes, are described, and the impact of various techniques on electrical performance is discussed.
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Summary

To enable development of novel signal processing circuits, a high-speed surface-channel charge coupled device (CCD) process has been co-integrated with the Lincoln Laboratory 180-nm RF fully depleted silicon-on-insulator (FDSOI) CMOS technology. The CCDs support charge transfer clock speeds in excess of 1 GHz while maintaining high charge transfer efficiency (CTE)...

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Impact of photoacid generator leaching on optics photocontamination in 193-nm immersion lithography

Published in:
J. Micro/Nanolith. MEMS MOEMS, Vol. 6, No. 1, January-March 2007, pp. 013001-1 - 013001-7.

Summary

Leaching of resist components into water has been reported in several studies. Even low dissolution levels of photoacid generator (PAG) may lead to photocontamination of the last optical surface of the projection lens. To determine the impact of this phenomenon on optics lifetime, we initiate a set of controlled studies, where predetermined amounts of PAG are introduced into pure water and the results monitored quantitatively. The study identifies the complex, nonlinear paths leading to photocontamination of the optics. We also discover that spatial contamination patterns of the optics are strongly dependent on the flow geometry. Both bare SiO2 surfaces as well as coated CaF2 optics are studied. We find that for all surfaces, at concentrations typical of leached PAG, below 500 ppb, the in situ self-cleaning processes prevent contamination of the optics.
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Summary

Leaching of resist components into water has been reported in several studies. Even low dissolution levels of photoacid generator (PAG) may lead to photocontamination of the last optical surface of the projection lens. To determine the impact of this phenomenon on optics lifetime, we initiate a set of controlled studies...

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Immersion patterning down to 27 nm half pitch

Published in:
J. Vac. Sci. Technol. B, Microelectron. Process. Phenon., Vol. 24, No. 6, November/December 2006, pp. 2789-2797 (EIPBN 2006, 30 May-2 June 2006).

Summary

Liquid immersion interference lithography at 157 nm has been used to print gratings of 27 nm half pitch with a fluorine-doped fused silica prism having index of 1.66. In order to achieve these dimensions, new immersion fluids have been designed and synthesized. These are partially fluorinated organosiloxanes with indexes up to 1.5. Their absorbance is on the order of 0.4/um (base 10), enabling the use of liquid films with micron-size thickness. To utilize these semiabsorptive fluids, an immersion interference printer has been designed, built, and implemented for handling micron-scale liquid layers.
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Summary

Liquid immersion interference lithography at 157 nm has been used to print gratings of 27 nm half pitch with a fluorine-doped fused silica prism having index of 1.66. In order to achieve these dimensions, new immersion fluids have been designed and synthesized. These are partially fluorinated organosiloxanes with indexes up...

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