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Slab-coupled optical waveguide photodiode

Published in:
CLEO-QELS, 2008 Conf. on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conf., 4-9 May 2008.
Topic:

Summary

We report the first high-current photodiode based on the slab-coupled optical waveguide concept. The device has a large mode (5.8 x 7.6 um) and ultra-low optical confinement ([] ~ 0.05%), allowing a 2-mm absorption length. The maximum photocurrent obtained was 250 mA (R = 0.8-A/W) at 1.55 um.
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Summary

We report the first high-current photodiode based on the slab-coupled optical waveguide concept. The device has a large mode (5.8 x 7.6 um) and ultra-low optical confinement ([] ~ 0.05%), allowing a 2-mm absorption length. The maximum photocurrent obtained was 250 mA (R = 0.8-A/W) at 1.55 um.

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250 mW, 1.5 um monolithic passively mode-locked slab-coupled optical waveguide laser

Published in:
Opt. Lett., Vol. 31, No. 2, January 15, 2006, pp. 223-225.

Summary

We report the demonstration of a 1.5 um InGaAsP mode-locked slab-coupled optical waveguide laser (SCOWL) producing 10 ps pulses with energies of 58 pJ and average output powers of 250 mW at a repetition rate of 4.29 GHz. To the best of our knowledge, this is the first passively mode-locked slab-coupled optical waveguide laser. The large mode and low confinement factor of the SCOWL architecture allows the realization of monolithic mode-locked lasers with high output power and pulse energy. The laser output is nearly diffraction limited with M2 values less than 1.2 in both directions.
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Summary

We report the demonstration of a 1.5 um InGaAsP mode-locked slab-coupled optical waveguide laser (SCOWL) producing 10 ps pulses with energies of 58 pJ and average output powers of 250 mW at a repetition rate of 4.29 GHz. To the best of our knowledge, this is the first passively mode-locked...

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InGaAsP/InP quantum-well electrorefractive modulators with sub-volt V[pi]

Published in:
SPIE Vol. 5435, Enabling Photonic Technologies for Aerospace Applications VI, 12-16 April 2004, pp. 53-63.

Summary

Advanced analog-optical sensor, signal processing and communication systems could benefit significantly from wideband (DC to > 50 GHz) optical modulators having both low half-wave voltage (V[pi]) and low optical insertion loss. An important figure-of-merit for modulators used in analog applications is TMAX/V[pi], where TMAX is the optical transmission of the modulator when biased for maximum transmission. Candidate electro-optic materials for realizing these modulators include lithium niobate (LiNbO3), polymers, and semiconductors, each of which has its own set of advantages and disadvantages. In this paper, we report the development of 1.5-um-wavelength Mach-Zehnder modulators utilizing the electrorefractive effect in InGaAsP/InP symmetric, uncoupled semiconductor quantum-wells. Modulators with 1-cm-long, lumped-element electrodes are found to have a push-pull V[pi] of 0.9V (V[pi]L = 9 V-mm) and 18-dB fiber-to-fiber insertion loss (TMAX/V[pi] = 0.018). Fabry-Perot cutback measurements reveal a waveguide propagation loss of 7 dB/cm and a waveguide-to-fiber coupling loss of 5 dB/facet. The relatively high propagation loss results from a combination of below-bandedge absorption and scattering due to waveguide-sidewall roughness. Analyses show that most of the coupling loss can be eliminated though the use of monolithically integrated invertedtaper optical-mode converters, thereby allowing these modulators to exceed the performance of commercial LiNbO3 modulators (TMAX/V[pi] ~ 0.1). We also report the analog modulation characteristics of these modulators.
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Summary

Advanced analog-optical sensor, signal processing and communication systems could benefit significantly from wideband (DC to > 50 GHz) optical modulators having both low half-wave voltage (V[pi]) and low optical insertion loss. An important figure-of-merit for modulators used in analog applications is TMAX/V[pi], where TMAX is the optical transmission of the...

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