Publications
Arrays of InP-based avalanche photodiodes for photon counting
July 1, 2007
Journal Article
Published in:
IEEE J. Sel. Top. Quantum Electron., Vol. 13, No. 4, July/August 2007, pp. 870-886.
Topic:
R&D area:
Summary
Arrays of InP-based avalanche photodiodes (APDs) with InGaAsP absorber regions have been fabricated and characterized in the Geiger mode for photon-counting applications. Measurements of APDs with InGaAsP absorbers optimized for 1.06 um wavelength show dark count rates (DCRs)
Summary
Arrays of InP-based avalanche photodiodes (APDs) with InGaAsP absorber regions have been fabricated and characterized in the Geiger mode for photon-counting applications. Measurements of APDs with InGaAsP absorbers optimized for 1.06 um wavelength show dark count rates (DCRs)
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