Publications

Refine Results

(Filters Applied) Clear All

InP-based single-photon detector arrays with asynchronous readout integrated circuits

Summary

We have developed and demonstrated a highduty- cycle asynchronous InGaAsP-based photon counting detector system with near-ideal Poisson response, roomtemperature operation, and nanosecond timing resolution for near-infrared applications. The detector is based on an array of Geiger-mode avalanche photodiodes coupled to a custom integrated circuit that provides for lossless readout via an asynchronous, nongated architecture. We present results showing Poisson response for incident photon flux rates up to 10 million photons per second and multiple photons per 3-ns timing bin.
READ LESS

Summary

We have developed and demonstrated a highduty- cycle asynchronous InGaAsP-based photon counting detector system with near-ideal Poisson response, roomtemperature operation, and nanosecond timing resolution for near-infrared applications. The detector is based on an array of Geiger-mode avalanche photodiodes coupled to a custom integrated circuit that provides for lossless readout via...

READ MORE

Arrays of InP-based avalanche photodiodes for photon counting

Summary

Arrays of InP-based avalanche photodiodes (APDs) with InGaAsP absorber regions have been fabricated and characterized in the Geiger mode for photon-counting applications. Measurements of APDs with InGaAsP absorbers optimized for 1.06 um wavelength show dark count rates (DCRs)
READ LESS

Summary

Arrays of InP-based avalanche photodiodes (APDs) with InGaAsP absorber regions have been fabricated and characterized in the Geiger mode for photon-counting applications. Measurements of APDs with InGaAsP absorbers optimized for 1.06 um wavelength show dark count rates (DCRs)

READ MORE

Afterpulsing in Geiger-mode avalanche photodiodes for 1.06um wavelength

Summary

We consider the phenomenon of afterpulsing in avalanche photodiodes (APDs) operating in gated and free-running Geiger mode. An operational model of afterpulsing and other noise characteristics of APDs predicts the noise behavior observed in the free-running mode. We also use gated-mode data to investigate possible sources of afterpulsing in these devices. For 30-um-diam, 1.06-um-wavelength InGaAsP/InP APDs operated at 290 K and 4 V overbias, we obtained a dominant trap lifetime of td=0.32 us, a trap energy of 0.11 eV, and a baseline dark count rate 245 kHz.
READ LESS

Summary

We consider the phenomenon of afterpulsing in avalanche photodiodes (APDs) operating in gated and free-running Geiger mode. An operational model of afterpulsing and other noise characteristics of APDs predicts the noise behavior observed in the free-running mode. We also use gated-mode data to investigate possible sources of afterpulsing in these...

READ MORE

Showing Results

1-3 of 3