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Aperture PCB assemblies: transition to production ready designs

October 18, 2016
  |
Conference Paper
Author:
Christopher Weigand
…
Published in:
6th Int. Symp. on Phased Array Systems and Technology, PAST 2016, 18-21 October 2016.
Topic:
fabrication
R&D area:
R&D group:

Summary

MACOM designed the initial radar panels for the next generation surveillance radar with limited funds, with the philosophy that the initial design would be kept as simple as possible and that incremental improvements would be made as the program progressed, with the intent of having a tile assembly that is easy to manufacture by the first build of a larger radar (approximately 80 panels). The design is now being updated for an 80 panel order with the goal of optimizing the design electrically, for assembly and for test. This paper will discuss both the design, assembly, packaging, and test updates that are being made to have a board and board assembly that is easy to manufacture and test, with the goal of keeping cost as low as possible. These techniques will not only be used for the MPAR tiles, but also for tiles that are currently being developed for other programs.
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Summary

MACOM designed the initial radar panels for the next generation surveillance radar with limited funds, with the philosophy that the initial design would be kept as simple as possible and that incremental improvements would be made as the program progressed, with the intent of having a tile assembly that is...

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Aperture PCB assemblies: transition to production ready designs

High-voltage GaN-on-silicon Schottky diodes

May 13, 2013
  |
Conference Paper
Author:
Timothy Boles
…
Published in:
CS ManTech 2013, 13-16 May 2013.
Topic:
electronics
R&D area:

Summary

M/A-COM Technology Solutions has continuing joint development efforts sponsored by the Department of Energy with MIT main campus and MIT Lincoln Laboratory to develop GaN-on-silicon two and three-terminal high-voltage/high current switching devices. The initial developmental goals were for a Schottky diode that has a reverse breakdown blocking voltage of >600 volts and is capable of handling 10 amperes of forward current. A comparison of the M/A-COM Technology Solutions lateral GaN Schottky diode on-resistance as a function of reverse breakdown voltage for a number of both lateral and vertical GaN Schottky diode geometries taken from the literature is presented. The substrates employed for all of these data points are either sapphire, SiC, silicon, and even one study which utilized single crystal GaN. Also included in this plot are theoretical limits for the basic materials typically used in GaN Schottky diode construction. It can be seen that the reverse breakdown results of approximately 1500 volts for M/A/-COM Technology Solutions lateral anode connected field GaN Schottky diodes on silicon substrates compare extremely favorably with the reported performance of the state-of-the-art devices, regardless of substrate material or design geometry.
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Summary

M/A-COM Technology Solutions has continuing joint development efforts sponsored by the Department of Energy with MIT main campus and MIT Lincoln Laboratory to develop GaN-on-silicon two and three-terminal high-voltage/high current switching devices. The initial developmental goals were for a Schottky diode that has a reverse breakdown blocking voltage of >600...

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High-voltage GaN-on-silicon Schottky diodes

High voltage GaN-on-silicon HEMT

May 1, 2013
  |
Journal Article
Author:
Timothy Boles
…
Published in:
Phys. Status Solidi C, Vol. 10, No. 5, May 2013, pp. 844-8.
Topic:
electronics
R&D area:

Summary

M/A-COM Technology Solutions has continued in the joint development efforts sponsored by the Department of Energy with MIT main campus amd MIT Lincoln Labs to develop GaN on silicon three terminal high voltage/high current HEMT switching devices. The first year developmental goals were for a three terminal structure that has a reverse breakdown characteristic of >1200 V and is capable of switching 10 amperes of current. An average three terminal breakown of 1322 V was achieved on a single finger 250 um GaN on silicon HEMT device utilizing a source connected field plate with a 4.5 um drain region overlap. An individual device breakdown on a single finger 250 um GaN on silicon HEMT device with a SCFP of >1630 V was measured at a current of 250 uA (1mA/mm) - One of the highest yet reported for GaN on silicon in the industry.
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Summary

M/A-COM Technology Solutions has continued in the joint development efforts sponsored by the Department of Energy with MIT main campus amd MIT Lincoln Labs to develop GaN on silicon three terminal high voltage/high current HEMT switching devices. The first year developmental goals were for a three terminal structure that has...

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High voltage GaN-on-silicon HEMT

Low cost multifunction phased array radar concept

October 12, 2010
  |
Conference Paper
Author:
Jeffrey S. Herd
…
Published in:
2010 IEEE Int. Symp. on Phased Array Systems, 12 October 2010.
Topic:
radar
R&D area:
R&D group:

Summary

MIT Lincoln Laboratory and M/A-COM are jointly conducting a technology demonstration of affordable Multifunction Phased Array Radar (MPAR) technology for Next Generation air traffic control and national weather surveillance services. Aggressive cost and performance goals have been established for the system. The array architecture and its realization using custom Transmit and Receive Integrated Circuits and a panel-based Line Replaceable Unit (LRU) will be presented. A program plan for risk reduction and system demonstration will be outlined.
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Summary

MIT Lincoln Laboratory and M/A-COM are jointly conducting a technology demonstration of affordable Multifunction Phased Array Radar (MPAR) technology for Next Generation air traffic control and national weather surveillance services. Aggressive cost and performance goals have been established for the system. The array architecture and its realization using custom Transmit...

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Low cost multifunction phased array radar concept

Multifunction phased array radar (MPAR) for aircraft and weather surveillance

May 10, 2010
  |
Conference Paper
Author:
Jeffrey S. Herd
…
Published in:
2010 IEEE Radar Conf., 10 May 2010.
Topic:
radar
R&D area:
R&D group:

Summary

MIT Lincoln Laboratory and M/A-COM are jointly conducting a technology demonstration of affordable Multifunction Phased Array Radar (MPAR) technology for Next Generation air traffic control and national weather surveillance services. Aggressive cost and performance goals have been established for the system. The array architecture and its realization using custom Transmit and Receive Integrated Circuits and a panel-based Line Replaceable Unit (LRU) will be presented. A program plan for risk reduction and system demonstration will be outlined.
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Summary

MIT Lincoln Laboratory and M/A-COM are jointly conducting a technology demonstration of affordable Multifunction Phased Array Radar (MPAR) technology for Next Generation air traffic control and national weather surveillance services. Aggressive cost and performance goals have been established for the system. The array architecture and its realization using custom Transmit...

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Multifunction phased array radar (MPAR) for aircraft and weather surveillance
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