Publications
Photonic ADC: overcoming the bottleneck of electronic jitter
Summary
Summary
Accurate conversion of wideband multi-GHz analog signals into the digital domain has long been a target of analog-to-digital converter (ADC) developers, driven by applications in radar systems, software radio, medical imaging, and communication systems. Aperture jitter has been a major bottleneck on the way towards higher speeds and better accuracy...
Compact external-cavity semiconductor mode-locked laser with quantum-well-intermixed modulator and saturable absorber
Summary
Summary
We demonstrate a slab-coupled optical waveguide external-cavity mode-locked laser having unique bandedges for the amplifier, modulator and saturable absorber elements. An average output power of 50mW and timing jitter of 254fs is achieved at 1.5-GHz.
Operation and optimization of silicon-diode-based optical modulators
Summary
Summary
An optical modulator in silicon based on a diode structure has been operated in both forward and reverse bias. This modulator achieves near state-of-the-art performance in both modes, thereby making this device idea for comparing the two modes of operation. In reverse bias, the device has a V[pi]L of 4.9...
CMOS-compatible dual-output silicon modulator for analog signal processing
Summary
Summary
A broadband, Mach-Zehnder-interferometer based silicon optical modulator is demonstrated, with an electrical bandwidth of 26 GHz and V[pi]L of 4 V·cm. The design of this modulator does not require epitaxial overgrowth and is therefore simpler to fabricate than previous devices with similar performance.
Effect of carrier lifetime on forward-biased silicon Mach-Zehnder modulators
Summary
Summary
We present a systematic study of Mach-Zehnder silicon optical modulators based on carrier-injection. Detailed comparisons between modeling and measurement results are made with good agreement obtained for both DC and AC characteristics. A figure of merit, static VpiL, as low as 0.24Vmm is achieved. The effect of carrier lifetime variation...
All silicon infrared photodiodes: photo response and effects of processing temperature
Summary
Summary
CMOS compatible infrared waveguide Si photodiodes are made responsive from 1100 to 1750 nm by Si+ implantation and annealing. This article compares diodes fabricated using two annealing temperatures, 300 and 475C. 0.25-mm-long diodes annealed to 300C have a response to 1539 nm radiation of 0.1 A W-1 at a reverse...