Publications

Suspensions of plasmonic nanoparticles can diffract optical beams due to the combination of thermal lensing and self-phase modulation. Here, we demonstrate extremely efficient optical continuous wave (CW) beam switching across the visible range in optimized suspensions of 5-nm Au and Ag nanoparticles in non-polar solvents, such as hexane and decane...

The H-terminated surface of diamond when activated with NO2 produces a surface conduction layer that has been used to make FETs. Variations in processing can significantly affect this conduction layer. This article discusses the effect of diamond surface preparation and H termination procedures on surface conduction. Surface preparations that generate...

This work demonstrates a novel broadband optical switch, based on dynamic-scattering effect in liquid crystals (LCs). Dynamic-scattering-mode technology was developed for display applications over four decades ago, but was displaced in favor of the twisted-nematic LCs. However, with the recent development of more stable LCs, dynamic scattering provides advantages over...

Devices connected to the internet are increasingly the targets of deliberate and sophisticated attacks. Embedded system engineers tend to focus on well-defined functional capabilities rather than "obscure" security and resilience. However, "after-the-fact" system hardening could be prohibitively expensive or even impossible. The co-design of security and resilience with functionality has...

Accurate conversion of wideband multi-GHz analog signals into the digital domain has long been a target of analog-to-digital converter (ADC) developers, driven by applications in radar systems, software radio, medical imaging, and communication systems. Aperture jitter has been a major bottleneck on the way towards higher speeds and better accuracy...

The optical switching time of twisted-nematic liquid-crystal cells using the liquid crystals, 5CB (C,H,,-Ph-Ph-CN), 50CB(C,Hw O-Ph-Ph-CN) and PCH5 (C,H,,-Cy-Ph-CN) have been characterized as a function of temperature, prebias voltage and switching voltage, V. The transition time from 90 % to 10 % transmission scales as V-1.9 and is limited to...

An optical modulator in silicon based on a diode structure has been operated in both forward and reverse bias. This modulator achieves near state-of-the-art performance in both modes, thereby making this device idea for comparing the two modes of operation. In reverse bias, the device has a V[pi]L of 4.9...

A broadband, Mach-Zehnder-interferometer based silicon optical modulator is demonstrated, with an electrical bandwidth of 26 GHz and V[pi]L of 4 V·cm. The design of this modulator does not require epitaxial overgrowth and is therefore simpler to fabricate than previous devices with similar performance.

We present a systematic study of Mach-Zehnder silicon optical modulators based on carrier-injection. Detailed comparisons between modeling and measurement results are made with good agreement obtained for both DC and AC characteristics. A figure of merit, static VpiL, as low as 0.24Vmm is achieved. The effect of carrier lifetime variation...

CMOS compatible infrared waveguide Si photodiodes are made responsive from 1100 to 1750 nm by Si+ implantation and annealing. This article compares diodes fabricated using two annealing temperatures, 300 and 475C. 0.25-mm-long diodes annealed to 300C have a response to 1539 nm radiation of 0.1 A W-1 at a reverse...