Publications

Remarkable advancements in coherence and control fidelity have been achieved in recent years with cryogenic solid-state qubits. Nonetheless, thermalizing such devices to their milliKelvin environments has remained a long-standing fundamental and technical challenge. In this context, we present a systematic study of the first-excited-state population in a 3D transmon superconducting qubit mounted in a dilution refrigerator with a variable temperature. Using a modified version of the protocol developed by Geerlings et al., we observe the excited-state population to be consistent with a Maxwell-Boltzmann distribution, i.e., a qubit in thermal equilibrium with the refrigerator, over the temperature range 35-150 mK. Below 35 mK, the excited-state population saturates at approximately 0.1%. We verified this result using a flux qubit with ten times stronger coupling to its readout resonator. We conclude that these qubits have effective temperature Teff ơ 35 mK. Assuming Teff is due solely to hot quasiparticles, the inferred qubit lifetime is 108 microns and in plausible agreement with the measured 80 microns.

We have investigated the driven dynamics of a superconducting flux qubit that is tunably coupled to a microwave resonator. We find that the qubit experiences an oscillating field mediated by off-resonant driving of the resonator, leading to strong modifications of the qubit Rabi frequency. This opens an additional noise channel, and we find that low-frequency noise in the coupling parameter causes a reduction of the coherence time during driven evolution. The noise can be mitigated with the rotary-echo pulse sequence, which, for driven systems, is analogous to the Hahn-echo sequence.

The dominant trend with conventional image sensors is toward scaled-down pixel sizes to increase spatial resolution and decrease chip size and cost. While highly capable chips, these monolithic image sensors devote substantial perimeter area to signal acquisition and control circuitry and trade off pixel complexity for fill factor. For applications such as wide-area persistent surveillance, reconnaissance, and astronomical sky surveys it is desirable to have simultaneous near-real-time imagery with fast, wide field-of-view coverage. Since the fabrication of a complex large-format sensor on a single piece of silicon is cost and yield-prohibitive and is limited to the wafer size, for these applications many smaller-sized image sensors are tiled together to realize very large arrays. Ideally the tiled image sensor has no missing pixels and the pixel pitch is continuous across the seam to minimize loss of information content. CCD-based imagers have been favored for these large mosaic arrays because of their low noise and high sensitivity, but CMOS-based image sensors bring architectural benefits, including electronic shutters, enhanced radiation tolerance, and higher data-rate digital outputs that are more easily scalable to larger arrays. In this report the first back-illuminated, 1 Mpixel, 3D-integrated CMOS image sensor with 8 mum-pitch 3D via connections. The chip employs a conventional pixel layout and requires 500 mum of perimeter silicon to house the support circuitry and protect the array from saw damage. In this paper we present a back-illuminated 1 Mpixel CMOS image sensor tile that includes a 64-channel vertically integrated ADC chip stack, and requires only a few pixels of silicon perimeter to the pixel array. The tile and system connector design support 4-side abuttability and fast burst data rates.