Publications
A study of crosstalk in a 256 x 256 photon counting imager based on silicon Geiger-mode avalanche photodiodes
Summary
Summary
We demonstrate a 256 x 256 passive photon counting imager based on hybridization of back-illuminated silicon Geiger-mode avalanche photodiodes to an all-digital CMOS counting chip. Photon detection efficiencies in the 10%-20% are observed at visible wavelengths. The detection efficiency is currently limited by optical crosstalk that leads to elevation of...
Detection statistics in Geiger-mode avalanche photodiode quad-cell arrays with crosstalk and dead time
Summary
Summary
The detection statistics of Geiger-mode photodetector subarrays with a combination of reset-time blocking loss and optical crosstalk are investigated. Closed-form expressions are obtained for the means and covariances of the numbers of counts in 2 x 2 subarrays (quad cells) used in Shack-Hartmann wavefront sensors. The predicted wavefront sensing precision...
MBE back-illuminated silicon Geiger-mode avalanche photodiodes for enhanced ultraviolet response
Summary
Summary
We have demonstrated a wafer-scale back-illumination process for silicon Geiger-mode avalanche photodiode arrays using Molecular Beam Epitaxy (MBE) for backside passivation. Critical to this fabrication process is support of the thin ( 10 um) detector during the MBE growth by oxide-bonding to a full-thickness silicon wafer. This back-illumination process makes...
Hybridization process for back-illuminated silicon Geiger-mode avalanche photodiode arrays
Summary
Summary
We present a unique hybridization process that permits high-performance back-illuminated silicon Geiger-mode avalanche photodiodes (GM-APDs) to be bonded to custom CMOS readout integrated circuits (ROICs) - a hybridization approach that enables independent optimization of the GM-APD arrays and the ROICs. The process includes oxide bonding of silicon GM-APD arrays to...
A 4-side tileable back illuminated 3D-integrated Mpixel CMOS image sensor
Summary
Summary
The dominant trend with conventional image sensors is toward scaled-down pixel sizes to increase spatial resolution and decrease chip size and cost. While highly capable chips, these monolithic image sensors devote substantial perimeter area to signal acquisition and control circuitry and trade off pixel complexity for fill factor. For applications...
Geiger-mode quad-cell array for adaptive optics
Summary
Summary
We report an array of Shack-Hartmann wavefront sensors using high-fill-factor Geiger-mode avalanche detector quad cells hybridized to all-digital CMOS counting circuits. The absence of readout noise facilitates fast wavefront sensing at low light levels.
Orthogonal transfer arrays for wide-field adaptive imaging
Summary
Summary
The orthogonal transfer array (OTA) is a novel charge-coupled device (CCD) imager based on the orthogonal-transfer CCD (OTCCD). The OTCCD, in turn, is a device capable of charge transfer in all directions and has been developed for adaptive imaging in ground-based astronomy. By using a bright guide star as a...
Lincoln Laboratory high-speed solid-state imager technology
Summary
Summary
Massachusetts Institute of Technology, Lincoln Laboratory (MIT LL) has been developing both continuous and burst solid-state focal-plane-array technology for a variety of high-speed imaging applications. For continuous imaging, a 128 ¿ 128-pixel charge coupled device (CCD) has been fabricated with multiple output ports for operating rates greater than 10,000 frames...
Laser radar imager based on 3D integration of Geiger-mode avalanche photodiodes with two SOI timing circuit layers
Summary
Summary
We have developed focal-plane arrays and laser-radar (ladar) imaging systems based on Geiger-mode avalanche photodiodes (APDs) integrated with high-speed all-digital CMOS timing circuits. A Geiger-mode APD produces a digital pulse upon detection of a single photon. This pulse is used to stop a fast digital counter in the pixel circuit...
Megapixel CMOS image sensor fabricated in three-dimensional integrated circuit technology
Summary
Summary
In this paper a 3D integrated 1024x1024, 8um pixel visible image sensor fabricated with oxide-to-oxide wafer bonding and 2-um square 3-D-vias in every pixel is presented. The 150mm wafer technology integrates a low-leakage, deep-depletion, 100% fill factor photodiode layer to a 3.3-V, 0.35-um gate length fully depleted (FD) SOI CMOS...