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High power (>5 W) lambda ~9.6 um tapered quantum cascade lasers grown by OMVPE

Summary

AlInAS/GaInAs superlattices (SLs) with barrier and well layers of various thicknesses were grown by organometallic vapor phase epitaxy to optimize growth of quantum cascade lasers (QCLs). High-resolution x-ray diffraction data of nominally lattice-matched SLs show a systematic shift toward more compressively strained SLs as the barrier/well layer thicknesses are decreased below about 10 nm. This shift is attributed to In surface segregation in both AlInAs and GaInAs. This shift is compensated for in the growth of ultra-thin layers in QCL structures. QCLs with tapered gain regions and emitting at 9.6 um are demonstrated with peak power as high as 5.3 W from one facet at 20 degrees C.
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Summary

AlInAS/GaInAs superlattices (SLs) with barrier and well layers of various thicknesses were grown by organometallic vapor phase epitaxy to optimize growth of quantum cascade lasers (QCLs). High-resolution x-ray diffraction data of nominally lattice-matched SLs show a systematic shift toward more compressively strained SLs as the barrier/well layer thicknesses are decreased...

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High voltage GaN-on-silicon HEMT

Published in:
Phys. Status Solidi C, Vol. 10, No. 5, May 2013, pp. 844-8.
Topic:

Summary

M/A-COM Technology Solutions has continued in the joint development efforts sponsored by the Department of Energy with MIT main campus amd MIT Lincoln Labs to develop GaN on silicon three terminal high voltage/high current HEMT switching devices. The first year developmental goals were for a three terminal structure that has a reverse breakdown characteristic of >1200 V and is capable of switching 10 amperes of current. An average three terminal breakown of 1322 V was achieved on a single finger 250 um GaN on silicon HEMT device utilizing a source connected field plate with a 4.5 um drain region overlap. An individual device breakdown on a single finger 250 um GaN on silicon HEMT device with a SCFP of >1630 V was measured at a current of 250 uA (1mA/mm) - One of the highest yet reported for GaN on silicon in the industry.
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Summary

M/A-COM Technology Solutions has continued in the joint development efforts sponsored by the Department of Energy with MIT main campus amd MIT Lincoln Labs to develop GaN on silicon three terminal high voltage/high current HEMT switching devices. The first year developmental goals were for a three terminal structure that has...

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Gadolinium oxide coated fully depleted silicon-on-insulator transistors for thermal neutron dosimetry

Published in:
Nucl. Instrum. Methods Phys. Res. A, Accel., Vol. 721, 2013, pp. 45-9.

Summary

Fully depleted silicon-on-insulator transistors coated with gadolinium oxide are shown to be effective thermal neutron dosimeters. The theoretical neutron detection efficiency is calculated to be higher for Gd2O3 than for other practical converter materials. Proof-of-concept dosimeter devices were fabricated and tested during thermal neutron irradiation. The transistor current changes linearly with neutron dose, consistent with increasing positive charge in the SOI buried oxide layer generated by ionization from high energy 157Gd(n,γ)158Gd conversion electrons. The measured neutron sensitivity is approximately 1/6 the maximum theoretical value, possibly due to electron-hole recombination or conversion electron loss in interconnect wiring above the transistors.
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Summary

Fully depleted silicon-on-insulator transistors coated with gadolinium oxide are shown to be effective thermal neutron dosimeters. The theoretical neutron detection efficiency is calculated to be higher for Gd2O3 than for other practical converter materials. Proof-of-concept dosimeter devices were fabricated and tested during thermal neutron irradiation. The transistor current changes linearly...

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LLGrid: supercomputer for sensor processing

Summary

MIT Lincoln Laboratory is a federally funded research and development center that applies advanced technology to problems of national interest. Research and development activities focus on long-term technology development as well as rapid system prototyping and demonstration. A key part of this mission is to develop and deploy advanced sensor systems. Developing the algorithms for these systems requires interactive access to large scale computing and data storage. Deploying these systems requires that the computing and storage capabilities are transportable and energy efficient. The LLGrid system of supercomputers allows hundreds of researchers simultaneous interactive access to large amounts of processing and storage for development and testing of their sensor processing algorithms. The requirements of the LLGrid user base are as diverse as the sensors they are developing: sonar, radar, infrared, optical, hyperspectral, video, bio and cyber. However, there are two common elements: delivering large amounts of data interactively to many processors and high level user interfaces that require minimal user training. The LLGrid software stack provides these capabilities on dozens of LLGrid computing clusters across Lincoln Laboratory. LLGrid systems range from very small (a few nodes) to very large (40+ racks).
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Summary

MIT Lincoln Laboratory is a federally funded research and development center that applies advanced technology to problems of national interest. Research and development activities focus on long-term technology development as well as rapid system prototyping and demonstration. A key part of this mission is to develop and deploy advanced sensor...

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Architecture-independent dynamic information flow tracking

Author:
Published in:
CC 2013: 22nd Int. Conf. on Compiler Construction, 16-24 March 2013, pp. 144-163.

Summary

Dynamic information flow tracking is a well-known dynamic software analysis technique with a wide variety of applications that range from making systems more secure, to helping developers and analysts better understand the code that systems are executing. Traditionally, the fine-grained analysis capabilities that are desired for the class of these systems which operate at the binary level require tight coupling to a specific ISA. This places a heavy burden on developers of these systems since significant domain knowledge is required to support each ISA, and the ability to amortize the effort expended on one ISA implementation cannot be leveraged to support other ISAs. Further, the correctness of the system must carefully evaluated for each new ISA. In this paper, we present a general approach to information flow tracking that allows us to support multiple ISAs without mastering the intricate details of each ISA we support, and without extensive verification. Our approach leverages binary translation to an intermediate representation where we have developed detailed, architecture-neutral information flow models. To support advanced instructions that are typically implemented in C code in binary translators, we also present a combined static/dynamic analysis that allows us to accurately and automatically support these instructions. We demonstrate the utility of our system in three different application settings: enforcing information flow policies, classifying algorithms by information flow properties, and characterizing types of programs which may exhibit excessive information flow in an information flow tracking system.
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Summary

Dynamic information flow tracking is a well-known dynamic software analysis technique with a wide variety of applications that range from making systems more secure, to helping developers and analysts better understand the code that systems are executing. Traditionally, the fine-grained analysis capabilities that are desired for the class of these...

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Etching selectivity of indium tin oxide to photoresist in high density chlorine- and ethylene-containing plasmas

Author:
Published in:
J. Vac. Sci. Technol. B, Microelectron. and Nanometer Structures, Vol. 31, No. 2, 13 March 2013, 021210.

Summary

Etching of indium tin oxide (ITO) thin films in high density chlorine plasmas is studied, with the goal of increasing the etching selectivity to photoresist. The ITO etching rate increases with ethylene addition, but is not affected by BCl3 addition. ITO exhibits a threshold energy for ion etching, whereas the photoresist etches spontaneously in chlorine plasmas. The ITO:photoresist selectivity increases with BCl3 addition, ion bombardment energy, and C2H4 addition. It is proposed that the ITO etching rate is limited by desorption of InClx products, and that ethylene addition assists in scavenging oxygen from ITO leaving loosely bound In, which is more easily removed by physical sputtering.
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Summary

Etching of indium tin oxide (ITO) thin films in high density chlorine plasmas is studied, with the goal of increasing the etching selectivity to photoresist. The ITO etching rate increases with ethylene addition, but is not affected by BCl3 addition. ITO exhibits a threshold energy for ion etching, whereas the...

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Reconfigurable RF systems using commercially available digital capacitor arrays

Published in:
38th Annual GOMACTech Conf., 11-14 March 2013.

Summary

Various RF circuit blocks implemented by using commercially available MEMS digital capacitor arrays are presented for reconfigurable RF systems. The designed circuit blocks are impedance-matching network, tunable bandpass filter, and VSWR sensor. The frequency range of the designed circuits is 0.4-4GHz. The MEMS digital capacitor arrays that are employed in the designs have built-in dc-to-dc voltage converter and serial interface significantly simplifying the control circuitry. The RF circuit blocks are suitable to low-cost, high-level of integration, thanks to the commercially available parts and standard RF packaging technologies.
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Summary

Various RF circuit blocks implemented by using commercially available MEMS digital capacitor arrays are presented for reconfigurable RF systems. The designed circuit blocks are impedance-matching network, tunable bandpass filter, and VSWR sensor. The frequency range of the designed circuits is 0.4-4GHz. The MEMS digital capacitor arrays that are employed in...

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Risk-based modeling to support NextGen concept assessment and validation

Published in:
MIT Lincoln Laboratory Report ATC-405
Topic:

Summary

This report provides a brief review of major risk-based modeling (RBM) approaches, with particular emphasis on how these tools can be applied during initial Next Generation Air Transportation System (NextGen) concept development and how their use can be validated. Effective safety analysis should play a role even during a new system's concept definition and development. Elements of NextGen are currently progressing through these early phases. NextGen will increasingly rely on integrating multiple systems and information together to enable improved efficiency, safety, and reduced environmental impact. Ensuring that such complex interconnected systems are developed to meet safety goals requires corresponding advances in RBM and safety assessment approaches. This report does not cover the more detailed safety analyses that must be applied to mature system concepts. Rather, the focus is on approaches for hazard identification, scoping, and coarse risk estimation for systems in the early conceptual development stage, when details on the design and operation of the system have yet to be resolved. Risk models applied is this constrained context cannot be expected to provide the same complete, quantitative results as they do for mature systems. Following a review of prior models, this report continues with recommendations for RBM development, application, validation, and coordination between NextGen efforts. Also, a discussion on safety and concept development is provided.
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Summary

This report provides a brief review of major risk-based modeling (RBM) approaches, with particular emphasis on how these tools can be applied during initial Next Generation Air Transportation System (NextGen) concept development and how their use can be validated. Effective safety analysis should play a role even during a new...

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RECOG: Recognition and Exploration of Content Graphs

Published in:
Pacific Vision, 26 February - March 1, 2013.

Summary

We present RECOG (Recognition and Exploration of COntent Graphs), a system for visualizing and interacting with speaker content graphs constructed from large data sets of speech recordings. In a speaker content graph, nodes represent speech signals and edges represent speaker similarity. First, we describe a layout algorithm that optimizes content graphs for ease of navigability. We then present an interactive tool set that allows an end user to find and explore interesting occurrences in the corpus. We also present a tool set that allows a researcher to visualize the shortcomings of current content graph generation algorithms. RECOG's layout and toolsets were implemented as Gephi plugins [1].
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Summary

We present RECOG (Recognition and Exploration of COntent Graphs), a system for visualizing and interacting with speaker content graphs constructed from large data sets of speech recordings. In a speaker content graph, nodes represent speech signals and edges represent speaker similarity. First, we describe a layout algorithm that optimizes content...

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High-power arrays of quantum cascade laser master-oscillator power-amplifiers

Published in:
Opt. Express, Vol. 21, No. 4, 25 February 2013, pp. 4518-4530.

Summary

We report on multi-wavelength arrays of master-oscillator power-amplifier quantum cascade lasers operating at wavelengths between 9.2 and 9.8 um. All elements of the high-performance array feature longitudinal (spectral) as well as transverse single-mode emission at peak powers between 2.7 and 10 W at room temperature. The performance of two arrays that are based on different seed-section designs is thoroughly studied and compared. High output power and excellent beam quality render the arrays highly suitable for stand-off spectroscopy applications.
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Summary

We report on multi-wavelength arrays of master-oscillator power-amplifier quantum cascade lasers operating at wavelengths between 9.2 and 9.8 um. All elements of the high-performance array feature longitudinal (spectral) as well as transverse single-mode emission at peak powers between 2.7 and 10 W at room temperature. The performance of two arrays...

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