Publications
Dynamic response of an electronically shuttered CCD imager
Summary
Summary
The dynamic response of an electronically shuttered charge-coupled device (CCD) imager to nanosecond voltage pulses has been investigated. Measurements show that the shutter can be dynamically opened and closed in nanosecond times. For the shutter opening, simulations indicate that the collection of photoelectrons occurs in times much shorter than that...
High-fill-factor, burst-frame-rate charge-coupled device
Summary
Summary
A 512x512-element, multi-frame charge-coupled device (CCD) has been developed for collecting four sequential image frames at megahertz rates. To operate at fast frame rates with high sensitivity, the imager uses an electronic shutter technology developed for back-illuminated CCDs. Device-level simulations were done to estimate the CCD collection well spaces for...
Investigation of the physical and practical limits of dense-only phase shift lithography for circuit feature definition
Summary
Summary
The rise of low- k1 optical lithography in integrated circuit manufacturing has introduced new questions concerning the physical and practical limits of particular subwavelength resolution-enhanced imaging approaches. For a given application, trade-offs between mask complexity, design cycle time, process latitude and process throughput must be well understood. It has recently...
High-speed, electronically shuttered solid-state imager technology
Summary
Summary
Electronically shuttered solid-state imagers are being developed for high-speed imaging applications. A 5 cmx5 cm, 512x512-element, multiframe charge-coupled device (CCD) imager has been fabricated for the Los Alamos National Laboratory DARHT facility that collects four sequential image frames at megahertz rates. To operate at fast frame rates with high sensitivity...
Broadband (200-1000 nm) back-illuminated ccd imagers
Summary
Summary
Improved and stable blue/UV quantum efficiency has been demonstrated on 2Kx4K imagers using molecular-beam epitaxy to create a thin doped layer on the back surface. Quantum efficiency data on thick (40-50 pm) imagers with single and dual-layer anti-reflection coatings is presented that demonstrates high and broadband response. Measurements of the...
Geiger-mode avalanche photodiodes for three-dimensional imaging
Summary
Summary
We discuss the properties of Geiger-mode avalanche photodiodes (APDs) and their use in developing an imaging laser radar (ladar). This type of photodetector gives a fast electrical pulse in response to the detection of even a single photon, allowing for sub-nsec-precision photon-flight-time measurement. We present ongoing work at Lincoln Laboratory...
Silicon-on-insulator-based single-chip image sensors: low-voltage scientific imaging
Summary
Summary
A low-voltage (
Monolithic 3.3V CCD/SOI-CMOS Imager Technology
Summary
Summary
We have developed a merged CCD/SOI-CMOS technology that enables the fabrication of monolithic, low-power imaging systems on a chip. The CCD's, fabricated in the bulk handle wafer, have charge-transfer inefficiencies of about 1x10(-5) and well capacities of more than 100,000 electrons with 3.3-V clocks and 8x8um pixels. Fully depleted 0.35pm...
SOI wafer selection for CCD/SOI-CMOS technology [Abstract]
Summary
Summary
We have developed a process that monolithically integrates fully depleted SOI CMOS (FDSOI) with high-performance CCD image sensors. This integrated technology that enables charged-coupled devices (CCD's) to be in close proximity to, yet isolated from, FDSOI circuits. This approach exploits both the advantages of FDSOI (fast, low-power CMOS with potentially...
Soft-x-ray CCD imagers for AXAF
Summary
Summary
We describe the key features and performance data of a 1024 x 1026-pixel frame-transfer imager for use as a soft-x-ray detector on the NASA X-ray observatory Advanced X-ray Astrophysics Facility (AXAF). The four-port device features a floating-diffusion output circuit with a responsivity of 20/spl mu/V/e/sup -/ and noise of about...